ATP207-TL-H SANYO, ATP207-TL-H Datasheet - Page 3

• Manufacturer Part Number: ATP207-TL-H
• Description: MOSFET N-CH 40V 65A ATPAK
• Manufacturer: SANYO

Specifications of ATP207-TL-H

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.1 mOhm @ 33A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 65A
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Input Capacitance (ciss) @ Vds: 2710pF @ 20V
• Power - Max: 50W
• Mounting Type: Surface Mount
• Package / Case: ATPAK (2 leads+tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Other names: 869-1082-2

1000
100
100
1.0
10
10
25
20
15
10
90
80
70
60
50
40
30
20
10
5
0
7
5
3
2
7
5
3
2
7
5
3
7
5
3
2
7
5
3
2
0
0.1
0.1
0
0
V DD =20V
V GS =10V
I D =17A
2
2
2
3
3
Drain-to-Source Voltage, V DS -- V
Gate-to-Source Voltage, V GS -- V
5
5 7
0.5
4
7
33A
R DS (on) -- V GS
Drain Current, I D -- A
Drain Current, I D -- A
1.0
1.0
SW Time -- I D
|
I D -- V DS
6
y
fs | -- I D
2
2
t d (on)
1.0
3
3
8
5 7
5 7
10
10
10
1.5
12
2
Tc=25 ° C
Single pulse
Tc=25 ° C
Single pulse
2
V DS =0V
Single pulse
3
3
14
IT14025
IT14027
5 7
IT14023
5
IT14029
7
ATP207
100
100
2.0
16
0.001
1000
0.01
100
100
1.0
0.1
100
10
25
20
15
10
90
80
70
60
50
40
30
20
10
0
5
0
--60 --40 --20
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
0
0
0
V GS =0V
Single pulse
V DS =10V
Single pulse
0.5
5
0.2
1.0
Ciss, Coss, Crss -- V DS
Drain-to-Source Voltage, V DS -- V
Gate-to-Source Voltage, V GS -- V
Diode Forward Voltage, V SD -- V
1.5
10
Case Temperature, Tc -- ° C
0
0.4
2.0
R DS (on) -- Tc
20
15
I D -- V GS
I S -- V SD
2.5
0.6
40
3.0
20
60
0.8
3.5
25
80
4.0
1.0
100
4.5
30
No. A1319-3/4
Single pulse
120
5.0
1.2
f=1MHz
35
140
IT14024
IT14026
IT14028
IT14030
5.5
160
6.0
1.4
40