ATP208-TL-H SANYO, ATP208-TL-H Datasheet
ATP208-TL-H
Specifications of ATP208-TL-H
Related parts for ATP208-TL-H
ATP208-TL-H Summary of contents
Page 1
... Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Marking : ATP208 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any " ...
Page 2
... Switching Time Test Circuit =20V 10V =45A =0.44Ω D PW=10μs D.C.≤1% G ATP208 P.G 50Ω S ATP208 Symbol Conditions V GS (off =10V =1mA | yfs | V DS =10V =45A R DS (on =45A =10V R DS (on =23A =4.5V Ciss V DS =20V, f=1MHz Coss V DS =20V, f=1MHz Crss ...
Page 3
... Gate-to-Source Voltage =10V 1 0.1 1.0 10 Drain Current Time -- I D 1000 V DD =20V =10V 100 0.1 1.0 10 Drain Current ATP208 140 Tc=25 ° =10V 120 100 1.6 1.8 2.0 0 0.5 IT14322 14 Tc=25 ° C Single pulse --60 --40 --20 IT14324 =0V 100 Single pulse 1 0 0.01 ...
Page 4
... Case Temperature °C Note on usage : Since the ATP208 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...