ATP208-TL-H SANYO, ATP208-TL-H Datasheet - Page 4

• Manufacturer Part Number: ATP208-TL-H
• Description: MOSFET N-CH 40V 90A ATPAK
• Manufacturer: SANYO

Specifications of ATP208-TL-H

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 45A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 90A
• Gate Charge (qg) @ Vgs: 83nC @ 10V
• Input Capacitance (ciss) @ Vds: 4510pF @ 20V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: ATPAK (2 leads+tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Other names: 869-1083-2

10
70
60
50
40
30
20
10
9
8
7
6
5
4
3
2
1
0
0
0
0
0
Note on usage : Since the ATP208 is a MOSFET product, please avoid using this device in the vicinity
This catalog provides information as of January , 2009. Specifi cations and information herein are subject
to change without notice.
V DS =20V
I D =90A
10
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
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are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
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product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
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mentioned above.
20
20
40
Total Gate Charge, Qg -- nC
Case Temperature, Tc -- °C
30
of highly charged objects.
60
V GS -- Qg
P D -- Tc
40
80
50
100
60
120
70
140
80
IT14330
IT14332
160
90
ATP208
100
1.0
0.1
120
100
10
80
60
40
20
0
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0.1
0
Tc=25 ° C
Single pulse
Operation in this area
is limited by R DS (on).
2
25
3
Drain-to-Source Voltage, V DS -- V
Ambient Temperature, Ta -- °C
5 7
50
1.0
E AS -- Ta
75
A S O
2
3
100
5 7 10
PW≤10μs
125
PS
2
No. A1396-4/4
150
3
IT14331
IT10478
5 7
175