SI4483EDY-T1-E3 Vishay, SI4483EDY-T1-E3 Datasheet

MOSFET P-CH 30V 10A 8-SOIC

SI4483EDY-T1-E3

Manufacturer Part Number
SI4483EDY-T1-E3
Description
MOSFET P-CH 30V 10A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4483EDY-T1-E3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.5 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
3V @ 250µA
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0085 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
10 A
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-14A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
14mohm
Rds(on) Test Voltage Vgs
25V
Threshold Voltage Vgs Typ
3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
SI4483EDY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4483EDY-T1-E3
Manufacturer:
VISHAY
Quantity:
25 000
Part Number:
SI4483EDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72862
S-83038-Rev. D, 22-Dec-08
Ordering Information: Si4483EDY-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
- 30
(V)
G
S
S
S
1
2
3
4
Si4483EDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.0085 at V
Top View
0.014 at V
SO-8
R
DS(on)
J
a
= 150 °C)
a
GS
GS
8
7
6
5
(Ω)
= - 4.5 V
= - 10 V
P-Channel 30-V (D-S) MOSFET
D
D
D
D
a
a
A
= 25 °C, unless otherwise noted
I
D
Steady State
Steady State
- 14
- 11
T
T
T
T
(A)
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• ESD Protection: 3000 V
• Notebook PC
Symbol
Symbol
T
R
R
J
Available
- Load Switch
- Adapter Switch
V
V
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
D
stg
G
®
Power MOSFET
Typical
- 2.7
10 s
- 14
- 11
3.0
1.9
33
70
16
7100 Ω
P-Channel
- 55 to 150
± 25
- 30
- 50
Steady State
Maximum
- 1.36
0.95
- 10
1.5
- 8
42
85
21
Vishay Siliconix
D
S
Si4483EDY
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI4483EDY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4483EDY-T1-E3 (Lead (Pb)-free) Si4483EDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4483EDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Turn-On Delay Time Rise Time Turn-Off Delay Time ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72862 S-83038-Rev. D, 22-Dec- °C J 0.8 1.0 1.2 Si4483EDY Vishay Siliconix 125 ° °C 25 °C 0 0.0 0.5 1.0 1.5 2.0 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 1.6 1.4 1.2 1.0 ...

Page 4

... Si4483EDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.8 0 0.4 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 = 250 µA 75 100 125 150 100 Limited DS(on 0 °C C Single Pulse ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72862. Document Number: 72862 S-83038-Rev. D, 22-Dec- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4483EDY Vishay Siliconix www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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