IRFU110PBF Vishay, IRFU110PBF Datasheet

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IRFU110PBF

Manufacturer Part Number
IRFU110PBF
Description
MOSFET N-CH 100V 4.3A I-PAK
Manufacturer
Vishay
Datasheets

Specifications of IRFU110PBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
540 mOhm @ 2.6A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
4.3A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
8.3nC @ 10V
Input Capacitance (ciss) @ Vds
180pF @ 25V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.54 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.3 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
4.3A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
540mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFU110PBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFU110PBF
Quantity:
70 000
Company:
Part Number:
IRFU110PBF
Quantity:
20 500
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91397
S10-2549-Rev. C, 08-Nov-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(V)
(nC)
 5.6 A, dI/dt  75 A/μs, V
D
= 25 V, starting T
(TO-251)
()
IPAK
G
D S
a
J
= 25 °C, L = 8.1 mH, R
c
a
a
DD
b
V
 V
GS
= 10 V
DS
G
, T
N-Channel MOSFET
J
Single
 150 °C.
100
8.3
2.3
3.8
g
= 25 , I
C
D
S
= 25 °C, unless otherwise noted)
Power MOSFET
V
0.54
GS
AS
at 10 V
= 4.3 A (see fig. 12).
T
C
for 10 s
= 25 °C
T
T
C
C
IPAK (TO-251)
SiHFU110-GE3
IRFU110PbF
SiHFU110-E3
IRFU110
SiHFU110
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Straight Lead
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
Definition
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
, T
P
device
DM
I
AR
GS
DS
AS
AR
D
D
stg
IRFU110, SiHFU110
design,
- 55 to + 150
LIMIT
300
± 20
100
4.3
2.7
0.2
4.3
2.5
5.5
17
75
25
low
Vishay Siliconix
d
on-resistance
www.vishay.com
UNIT
W/°C
V/ns
mJ
mJ
°C
W
V
A
A
and
1

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IRFU110PBF Summary of contents

Page 1

... Simple Drive Requirements D • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized cost-effectiveness. S N-Channel MOSFET IPAK (TO-251) SiHFU110-GE3 IRFU110PbF SiHFU110-E3 IRFU110 SiHFU110 = 25 °C, unless otherwise noted ° 100 ° ...

Page 2

... IRFU110, SiHFU110 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic ...

Page 3

... TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91397 S10-2549-Rev. C, 08-Nov- °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C IRFU110, SiHFU110 Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRFU110, SiHFU110 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91397 S10-2549-Rev. C, 08-Nov-10 ...

Page 5

... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91397 S10-2549-Rev. C, 08-Nov-10 IRFU110, SiHFU110 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) r d(off) f Fig. 10b - Switching Time Waveforms www ...

Page 6

... IRFU110, SiHFU110 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. ...

Page 7

... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91397. Document Number: 91397 S10-2549-Rev ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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