IRFU110PBF Vishay, IRFU110PBF Datasheet - Page 3

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IRFU110PBF

Manufacturer Part Number
IRFU110PBF
Description
MOSFET N-CH 100V 4.3A I-PAK
Manufacturer
Vishay
Datasheets

Specifications of IRFU110PBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
540 mOhm @ 2.6A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
4.3A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
8.3nC @ 10V
Input Capacitance (ciss) @ Vds
180pF @ 25V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.54 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.3 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
4.3A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
540mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFU110PBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFU110PBF
Quantity:
70 000
Company:
Part Number:
IRFU110PBF
Quantity:
20 500
IRFU110, SiHFU110
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, T
= 25 °C
Fig. 3 - Typical Transfer Characteristics
C
Fig. 2 - Typical Output Characteristics, T
= 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
C
Document Number: 91397
www.vishay.com
S10-2549-Rev. C, 08-Nov-10
3

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