IRFBC20LPBF Vishay, IRFBC20LPBF Datasheet
IRFBC20LPBF
Specifications of IRFBC20LPBF
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IRFBC20LPBF Summary of contents
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... T = 100 ° ° °C C for 2.2 A (see fig. 12 150 °C. J Vishay Siliconix device design, low on-resistance power capability and the lowest 2 I PAK (TO-262) a SiHFBC20L-GE3 a IRFBC20LPbF a SiHFBC20L-E3 a IRFBC20L a SiHFBC20L SYMBOL LIMIT V 600 DS V ± 2 1.4 I 8 5.0 AR 3.1 ...
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... IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient (PCB a Mounted, steady-state) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91107 S10-2433-Rev. B, 25-Oct-10 IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L = 25 ° 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix Fig Typical Transfer Characteristics www.vishay.com 3 ...
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... IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91107 S10-2433-Rev. B, 25-Oct-10 ...
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... V DS Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91107 S10-2433-Rev. B, 25-Oct-10 IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L + Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
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... IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Maximum Avalanche Energy vs. Drain Current www.vishay.com 6 Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91107 S10-2433-Rev ...
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... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91107. Document Number: 91107 S10-2433-Rev ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...