IRFBE30SPBF Vishay, IRFBE30SPBF Datasheet - Page 2

• Manufacturer Part Number: IRFBE30SPBF
• Description: MOSFET N-CH 800V 4.1A D2PAK
• Manufacturer: Vishay

Specifications of IRFBE30SPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 4.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 78nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.1 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 4.1A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 3ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFBE30SPBF

IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
www.vishay.com
2
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
= 25 °C, unless otherwise noted)
a
SYMBOL
SYMBOL
V
R
V
t
t
C
R
R
I
I
C
R
V
DS(on)
C
Q
Q
V
GS(th)
d(off)
I
GSS
DSS
d(on)
Q
DS
g
Q
L
t
L
SM
t
I
t
t
on
thCS
DS
oss
SD
thJA
thJC
iss
rss
S
gs
gd
rr
fs
r
f
D
S
g
rr
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
J
GS
GS
V
R
= 25 °C, I
DS
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
g
J
Reference to 25 °C, I
= 10 V
= 10 V
MIN.
= 12 , R
= 640 V, V
= 25 °C, I
-
-
-
V
V
V
V
V
f = 1.0 MHz, see fig. 5
TEST CONDITIONS
DD
DS
DS
DS
GS
= 400 V, I
F
= 800 V, V
= 100 V, I
= V
= 0 V, I
V
= 4.1 A, dI/dt = 100 A/μs
V
V
GS
DS
D
S
GS
GS
I
GS
D
= 95 , see fig. 10
= 4.1 A, V
= ± 20 V
= 25 V,
, I
= 4.1 A, V
= 0 V,
see fig. 6 and 13
= 0 V, T
D
D
= 250 μA
D
= 250 μA
D
I
GS
D
= 4.1 A,
= 2.5 A
= 2.5 A
D
TYP.
= 0 V
0.50
GS
J
= 1 mA
-
-
DS
= 125 °C
G
G
= 0 V
= 400 V,
b
b
D
S
b
b
D
S
b
MIN.
800
2.0
2.5
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.0
62
-
S10-2433-Rev. B, 25-Oct-10
Document Number: 91119
TYP.
1300
0.90
310
190
480
4.5
7.5
1.8
12
33
82
30
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
± 100
100
500
720
4.0
3.0
9.6
4.1
1.8
2.7
S
78
45
16
-
-
-
-
-
-
-
-
-
-
-
-
and L
UNIT
°C/W
D
UNIT
V/°C
)
nC
nH
nC
nA
μA
pF
ns
ns

S
A
V
V
V