IRF6626TR1 International Rectifier, IRF6626TR1 Datasheet - Page 5

• Manufacturer Part Number: IRF6626TR1
• Description: MOSFET N-CH 30V 16A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6626TR1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.4 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 2.35V @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2380pF @ 15V
• Power - Max: 2.2W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric ST
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.4 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 16 A
• Power Dissipation: 2.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 4.5 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 15 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF6626TR1TR

Fig 12. Maximum Drain Current vs. Case Temperature
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Fig 10. Typical Source-Drain Diode Forward Voltage
1000
100
10
80
70
60
50
40
30
20
10
1
0
0
0.0
25
T J = 150°C
T J = 25°C
T J = 40°C
0.2
V SD , Source-to-Drain Voltage (V)
50
T C , Case Temperature (°C)
0.4
75
0.6
Fig 14. Maximum Avalanche Energy vs. Drain Current
0.8
100
100
80
60
40
20
1.0
V GS = 0V
0
25
125
1.2
Starting T J , Junction Temperature (°C)
50
1.4
150
75
100
1000
0.01
Fig 13. Threshold Voltage vs. Temperature
I D
BOTTOM 13A
100
0.1
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
1
Fig11. Maximum Safe Operating Area
0.01
-75
125
Ta = 25°C
Tj = 150°C
Single Pulse
OPERATION IN THIS AREA
LIMITED BY R DS (on)
TOP
5.6A
8.4A
-50
V DS , Drain-to-Source Voltage (V)
0.10
-25
150
T J , Temperature ( °C )
I D = 50µA
0
25
1.00
10msec
50
1msec
75 100 125 150
100µsec
10.00
IRF6626
100.00
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