IRF6626TR1 International Rectifier, IRF6626TR1 Datasheet

IRF6626TR1

Manufacturer Part Number

IRF6626TR1

Description

MOSFET N-CH 30V 16A DIRECTFET

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF6626.pdf (10 pages)

Specifications of IRF6626TR1

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

5.4 mOhm @ 16A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

16A

Vgs(th) (max) @ Id

2.35V @ 250µA

Gate Charge (qg) @ Vgs

29nC @ 4.5V

Input Capacitance (ciss) @ Vds

2380pF @ 15V

Power - Max

2.2W

Mounting Type

Surface Mount

Package / Case

DirectFET™ Isometric ST

Configuration

Single Quad Drain Dual Source

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

5.4 mOhms

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

16 A

Power Dissipation

2.2 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Fall Time

4.5 ns

Minimum Operating Temperature

- 40 C

Rise Time

15 ns

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

IRF6626TR1TR

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Description

The IRF6626 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET

lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible

with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering

techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows

dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6626 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching

losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors

operating at higher frequencies. The IRF6626 has been optimized for parameters that are critical in synchronous buck operating from 12 volt

buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.

Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

‚

Notes:

www.irf.com

Absolute Maximum Ratings

applications

RoHS compliant containing no lead or bromide

Low Profile (<0.7 mm)

Dual Sided Cooling Compatible

Ultra Low Package Inductance

Optimized for High Frequency Switching

Ideal for CPU Core DC-DC Converters

Optimized for both Sync. FET and some Control FET

Low Conduction and Switching Losses

Compatible with existing Surface Mount Techniques

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET MOSFETs

Repetitive rating; pulse width limited by max. junction temperature.

@ T

= 25°C

= 70°C

= 25°C

Fig 1. Typical On-Resistance vs. Gate Voltage

V GS, Gate -to -Source Voltage (V)

T J = 25°C

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Single Pulse Avalanche Energy

Avalanche Current

T J = 125°C

Ãe

Parameter

I D = 16A

@ 10V

„

†

‰

30V max ±20V max 4.0mΩ@ 10V 5.2mΩ@ 4.5V

19nC

Starting T

Surface mounted on 1 in. square Cu board, steady state.

g tot

DSS

measured with thermocouple mounted to top (Drain) of part.

6.0

5.0

4.0

3.0

2.0

1.0

0.0

Fig 2. Typical On-Resistance vs. Gate Voltage

6.7nC

= 25°C, L = 0.29mH, R

I D = 13A

DirectFET™ Power MOSFET ‚

Q G Total Gate Charge (nC)

1.6nC

V DS = 24V

V DS = 15V

gs2

Max.

130

±20

DS(on)

5.4nC

= 25Ω, I

IRF6626

packaging to achieve the

DirectFET™ ISOMETRIC

13nC

= 13A.

oss

DS(on)

Units

1.8V

11/17/05

gs(th)

Related parts for IRF6626TR1

IRF6626TR1 Summary of contents

Page 1

RoHS compliant containing no lead or bromide l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized ...

Page 2

IRF6626 Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient ...

Page 3

Absolute Maximum Ratings 25°C Power Dissipation D A Power Dissipation 70° 25°C Power Dissipation Peak Soldering Temperature P Operating Junction and Storage Temperature ...

Page 4

IRF6626 1000 100 10 2.5V 1 ≤ 60µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 15V ≤ 60µs PULSE WIDTH 100 T J ...

Page 5

150° 25° 40° 0.0 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage ...

Page 6

IRF6626 Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µF D.U. 3mA I G Current Sampling Resistors Fig 15a. Gate Charge Test Circuit D.U 20V 0.01 Ω ...

Page 7

D.U.T + ƒ • • - • + ‚ „ R • G • • SD • Fig 18. DirectFET™ Substrate and PCB Layout, ST Outline ƒ (Small Size Can, T-Designation). Please see DirectFET application note AN-1035 ...

Page 8

IRF6626 DirectFET™ Outline Dimension, ST Outline (Small Size Can, T-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DirectFET™ Part Marking 8 DIMENSIONS IMPERIAL METRIC ...

Page 9

... DirectFET™ Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6626). For 1000 parts on 7" reel, order IRF6626TR1 CODE WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com ...

Page 10

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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