IRF6621 International Rectifier, IRF6621 Datasheet

IRF6621

Manufacturer Part Number

IRF6621

Description

MOSFET N-CH 30V 12A DIRECTFET

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF6621TR1.pdf (10 pages)

Specifications of IRF6621

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

9.1 mOhm @ 12A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

12A

Vgs(th) (max) @ Id

2.25V @ 250µA

Gate Charge (qg) @ Vgs

17.5nC @ 4.5V

Input Capacitance (ciss) @ Vds

1460pF @ 15V

Power - Max

2.2W

Mounting Type

Surface Mount

Package / Case

DirectFET™ Isometric SQ

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF6621PBF-6

Manufacturer:

Quantity:

4 775

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF6621TRPBF

Manufacturer:

Quantity:

20 000

Current page: 1 of 10
Download datasheet (260Kb)

Description

The IRF6621 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET

lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible

with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering

techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows

dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6621 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching

losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors

operating at higher frequencies. The IRF6621 has been optimized for parameters that are critical in synchronous buck operating from 12 volt

bus converters including Rds(on) and gate charge to minimize losses in the control FET socket.

Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

‚

Notes:

www.irf.com

Absolute Maximum Ratings

RoHs Compliant Containing No Lead and Bromide

Low Profile (<0.7 mm)

Dual Sided Cooling Compatible

Ultra Low Package Inductance

Optimized for High Frequency Switching

Ideal for CPU Core DC-DC Converters

Optimized for Control FET application

Low Conduction and Switching Losses

Compatible with existing Surface Mount Techniques

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

@ T

= 25°C

= 70°C

= 25°C

2.0

Fig 1. Typical On-Resistance Vs. Gate Voltage

V GS , Gate-to-Source Voltage (V)

T J = 25°C

4.0

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Single Pulse Avalanche Energy

Avalanche Current

6.0

T J = 125°C

Ãg

8.0

I D = 12A

Parameter

10.0

@ 10V

„

…

†

11.7nC

30V max ±20V max 7.0mΩ@ 10V 9.3mΩ@ 4.5V

Repetitive rating; pulse width limited by max. junction temperature.

Starting T

g tot

DSS

measured with thermocouple mounted to top (Drain) of part.

Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage

4.2nC

= 25°C, L = 0.29mH, R

I D = 9.6A

DirectFET™ Power MOSFET ‚

1.0nC

Q G Total Gate Charge (nC)

gs2

Max.

±20

9.6

V DS = 24V

VDS= 15V

DS(on)

10nC

= 25Ω, I

IRF6621

packaging to achieve the

DirectFET™ ISOMETRIC

6.9nC

= 9.6A.

oss

DS(on)

Units

1.8V

gs(th)

10/6/05

Related parts for IRF6621

IRF6621 Summary of contents

Page 1

... The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6621 has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses in the control FET socket. ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

Absolute Maximum Ratings 25°C Power Dissipation 70°C Power Dissipation D A Power Dissipation 25° Peak Soldering Temperature P T Operating Junction and J T Storage Temperature ...

Page 4

PULSE WIDTH 2. 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 100 150° 25° -40°C 10 ...

Page 5

150° 25°C 100 -40° 0.4 0.6 0.8 1 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage ...

Page 6

Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µ 3mA I G Current Sampling Resistors Fig 15a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 16a. ...

Page 7

D.U.T + ƒ • • - • + ‚ - R • • • SD • Fig 18. DirectFET™ Substrate and PCB Layout, SQ Outline (Small Size Can, Q-Designation). Please see DirectFET application note AN-1035 for all details regarding ...

Page 8

DirectFET™ Outline Dimension, SQ Outline (Small Size Can, Q-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DirectFET™ Part Marking 8 DIMENSIONS IMPERIAL METRIC MAX ...

Page 9

... DirectFET™ Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6621). For 1000 parts on 7" reel, order IRF6621TR1 CODE WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com ...

Page 10

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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