IRF6646 International Rectifier, IRF6646 Datasheet
IRF6646
Specifications of IRF6646
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IRF6646 Summary of contents
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... The IRF6646 is optimized for primary side bridge topologies in isolated DC-DC applications, for 48V(±10%) or 36V to 60V ETSI input voltage range systems, and is also ideal for secondary side synchronous rectification in regulated isolated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters ...
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... IRF6646 Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...
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... Peak Zthja + Tc 0.1 1 measured with thermocouple incontact with top (Drain) of part. J ƒ Mounted on minimum with footprint full size board with metalized back and with small clip heatsink (still air) IRF6646 Units W °C Units 45 ––– ––– °C/W 1.4 – ...
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... IRF6646 100 10 6.0V ≤ 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 10V ≤ 60µs PULSE WIDTH 100 150° 25° -40° Gate-to-Source Voltage (V) Fig 6. Typical Transfer Characteristics 10000 0V MHZ C iss = SHORTED C rss = oss = iss ...
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... Drain-to-Source Voltage (V) Fig11. Maximum Safe Operating Area 6.0 5.0 4.0 3.0 2.0 -75 -50 - Temperature ( °C ) Fig 13. Typical Threshold Voltage vs. Junction Temperature TOP 3.3A 4.0A 125 150 IRF6646 100µsec 1msec 10.00 100. 150µ 250µ 1.0mA 1.0A 100 125 150 5 ...
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... IRF6646 Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µ 3mA I G Current Sampling Resistors Fig 15a. Gate Charge Test Circuit D.U 20V GS 0.01 Ω Fig 16a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig 17a. Switching Time Test Circuit ...
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... Driver Gate Drive P.W. D.U.T. I Reverse Recovery „ Current - + D.U.T. V Re-Applied G + Voltage - Inductor Curent ® HEXFET Power MOSFETs P.W. Period D = Period Waveform SD Body Diode Forward Current di/dt Waveform DS Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% for N-Channel IRF6646 V =10V ...
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... IRF6646 DirectFET™ Outline Dimension, MN Outline (Medium Size Can, N-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DirectFET™ Part Marking 8 7I89 5 HIT9(Ã7IHTRIFFCHAÃ 6 CG9HSCIHSÃ5R9ÃCHÃGG ...
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... DirectFET™ Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6646). For 1000 parts on 7" reel, order IRF6646TR1 CODE WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...