IRF6648 International Rectifier, IRF6648 Datasheet

MOSFET N-CH 60V 86A DIRECTFET

IRF6648

Manufacturer Part Number
IRF6648
Description
MOSFET N-CH 60V 86A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF6648

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7 mOhm @ 17A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
86A
Vgs(th) (max) @ Id
4.9V @ 150µA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
2120pF @ 25V
Power - Max
2.8W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric MN
Configuration
Single Quad Drain Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
7 m Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
86 A
Power Dissipation
2.8 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
13 ns
Minimum Operating Temperature
- 40 C
Rise Time
29 ns
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF6648LF
Manufacturer:
IR
Quantity:
5 357
Part Number:
IRF6648TR1PBF
Manufacturer:
InfineonTech
Quantity:
8 042
Part Number:
IRF6648TRPBF
Manufacturer:
International Rectifier
Quantity:
25 733
Part Number:
IRF6648TRPBF
Manufacturer:
AD
Quantity:
6 942
Company:
Part Number:
IRF6648TRPBF
Quantity:
7 600
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www.irf.com
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Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
Description
The IRF6648 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFET
achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods
and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving
previous best thermal resistance by 80%.
The IRF6648 is an optimized switch for use in synchronous rectification circuits with 5-12Vout, and is also ideal for use as a
primary side switch in 24Vin forward converters. The reduced total losses in the device coupled with the high level of thermal
performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this
device ideal for high performance isolated DC-DC converters.
V
V
I
I
I
I
I
I
Absolute Maximum Ratings
D
D
DM
S
S
SM
to 12V outputs
DS
GS
RoHs Compliant Containing No Lead and Bromide 
Dual Sided Cooling Compatible 
Ideal for 24V input Primary Side Forward Converters
Compatible with Existing Surface Mount Techniques 
Low Profile (<0.7 mm)
Ultra Low Package Inductance
Optimized for High Frequency Switching 
Optimized for Synchronous Rectification for 5V
Low Conduction Losses
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Repetitive rating; pulse width limited by max. junction temperature.
@ T
@ T
@ T
@ T
SH
C
C
C
C
= 25°C
= 70°C
= 25°C
= 70°C
SJ
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Continuous Source Current (Body Diode)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
SP
e
Parameter
GS
GS
MZ
@ 10V
@ 10V
e
MN
60V max ±20V max 5.5mΩ@ 10V
T
V
C
DSS
measured with thermocouple mounted to top (Drain) of part.

MN
V
GS
DirectFET™ Power MOSFET ‚
Max.
260
260
±20
R
60
86
69
81
52
DS(on)
IRF6648
Q
36nC
TM
ISOMETRIC
DirectFET™
g tot
packaging to
Units
14nC
Q
V
A
02/28/06
gd
1

Related parts for IRF6648

IRF6648 Summary of contents

Page 1

... The IRF6648 is an optimized switch for use in synchronous rectification circuits with 5-12Vout, and is also ideal for use as a primary side switch in 24Vin forward converters. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters ...

Page 2

... IRF6648 Electrical Characteristic @ T Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage ...

Page 3

... Ri (°C/W) τi (sec τ 0.17199 0.000044 C τ C τ τ 0.67673 0.001660 2 3 τ τ 0.54961 0.007649 Ci= τi/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Zthjc + Tc 0.001 0.01 J IRF6648 Units W °C Units °C/W 0.1 Note ‡ 3 ...

Page 4

... IRF6648 1000 VGS TOP 15V 10V 8.0V 7.0V BOTTOM 6.0V 100 10 ≤ 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 1000 10V ≤60µs PULSE WIDTH 100 150° 25° -40° Gate-to-Source Voltage (V) Fig 4. Typical Transfer Characteristics ...

Page 5

... 150µ 250µA 3 1.0mA 1.0A 2.0 -75 -50 - 100 125 150 Temperature ( °C ) Fig 11. Typical Threshold Voltage vs. Junction Temperature 200 I D 180 160 BOTTOM 34A 140 120 100 100 Starting Junction Temperature (°C) IRF6648 25°C 80 100 TOP 12A 18A 125 150 5 ...

Page 6

... IRF6648 Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µ 3mA I G Current Sampling Resistors Fig 14a. Gate Charge Test Circuit D.U 20V GS 0.01 Ω Fig 15a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig 16a. Switching Time Test Circuit ...

Page 7

... D.U.T. I Reverse Recovery „ Current - + D.U.T. V Re-Applied G + Voltage - Inductor Curent ® HEXFET Power MOSFETs P.W. Period D = Period Waveform SD Body Diode Forward Current di/dt Waveform DS Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% for N-Channel G = GATE D = DRAIN S = SOURCE D D IRF6648 V =10V ...

Page 8

... IRF6648 DirectFET™ Outline Dimension, MN Outline (Medium Size Can, N-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DirectFET™ Part Marking 8 +/'05+105 G9TRC7 CGP9RC5F 7I89 G5X ...

Page 9

... DirectFET™ Tape & Reel Dimension (Showing component orientation). IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6648). For 1000 parts on 7" reel, order IRF6648TR1 REEL DIMENSIONS STANDARD OPTION (QTY 4800) ...

Page 10

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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