IRF6644 International Rectifier, IRF6644 Datasheet
IRF6644
Specifications of IRF6644
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IRF6644 Summary of contents
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... The IRF6644 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters ...
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... IRF6644 Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...
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... Rectangular Pulse Duration (sec) „ T measured with thermocouple incontact with top (Drain) of part. C … measured at θ ƒ small clip heatsink (still air) IRF6644 Max. 2.8 1.8 89 270 - 150 Typ. Max. ––– 45 12.5 ––– 20 ––– ...
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... IRF6644 100 6.0V 10 ≤ 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 100. 150° 25°C 10. -40°C 1.00 0. 10V ≤ 60µs PULSE WIDTH 0.01 3.0 4.0 5 Gate-to-Source Voltage (V) Fig 6. Typical Transfer Characteristics 100000 0V MHZ C iss = SHORTED ...
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... Fig 14. Maximum Avalanche Energy Vs. Drain Current www.irf.com 4.0 5.0 125 150 1000 TOP 800 BOTTOM 600 400 200 100 Starting Junction Temperature (°C) IRF6644 1000 OPERATION IN THIS AREA LIMITED (on) 100 100µsec 10 1msec 100msec 1 10msec 25° 150°C Single Pulse 0.1 0.01 0.10 1.00 10. Drain-toSource Voltage (V) Fig11 ...
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... IRF6644 Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µ 3mA I G Current Sampling Resistors Fig 15a. Gate Charge Test Circuit D.U 20V GS 0.01 Ω Fig 16b. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig 17a. Switching Time Test Circuit ...
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... D.U.T. I Reverse Recovery „ Current - + D.U.T. V Re-Applied G + Voltage - Inductor Curent ® HEXFET Power MOSFETs P.W. Period D = Period Waveform SD Body Diode Forward Current di/dt Waveform DS Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% for N-Channel G = GATE D = DRAIN S = SOURCE D D IRF6644 V =10V ...
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... IRF6644 DirectFET™ Outline Dimension, MN Outline (Medium Size Can, N-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. NOTE: CONTROLLING DIMENSIONS ARE IN MM DirectFET™ Part Marking ...
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... DirectFET™ Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6644). For 1000 parts on 7" reel, order IRF6644TR1 CODE WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...