IRF6644 International Rectifier, IRF6644 Datasheet - Page 10

• Manufacturer Part Number: IRF6644
• Description: MOSFET N-CH 100V DIRECTFET-MN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6644

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13 mOhm @ 10.3A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 10.3A
• Vgs(th) (max) @ Id: 4.8V @ 150µA
• Gate Charge (qg) @ Vgs: 47nC @ 10V
• Input Capacitance (ciss) @ Vds: 2210pF @ 25V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MN
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13 m Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10.3 A
• Power Dissipation: 2.8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 16 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 26 ns
• Lead Free Status / Rohs Status: No

Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/