IRF6644 International Rectifier, IRF6644 Datasheet - Page 4

• Manufacturer Part Number: IRF6644
• Description: MOSFET N-CH 100V DIRECTFET-MN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6644

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13 mOhm @ 10.3A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 10.3A
• Vgs(th) (max) @ Id: 4.8V @ 150µA
• Gate Charge (qg) @ Vgs: 47nC @ 10V
• Input Capacitance (ciss) @ Vds: 2210pF @ 25V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MN
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13 m Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10.3 A
• Power Dissipation: 2.8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 16 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 26 ns
• Lead Free Status / Rohs Status: No

IRF6644
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
Fig 6. Typical Transfer Characteristics
100000
100.00
Fig 4. Typical Output Characteristics
10000
10.00
1000
100
1.00
0.10
0.01
100
10
10
1
0.1
3.0
1
V DS , Drain-to-Source Voltage (V)
T J = 150°C
T J = 25°C
T J = -40°C
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
4.0
1
6.0V
Ciss
Coss
Crss
V DS = 10V
≤ 60µs PULSE WIDTH
5.0
≤ 60µs PULSE WIDTH
Tj = 25°C
f = 1 MHZ
10
10
TOP
BOTTOM
6.0
VGS
15V
10V
8.0V
7.0V
6.0V
100
7.0
100
Fig 7. Normalized On-Resistance vs. Temperature
100
2.0
1.5
1.0
0.5
20
16
12
10
8
4
0
1
Fig 9. Typical Total Gate Charge vs
-60 -40 -20
0.1
0
Fig 5. Typical Output Characteristics
I D = 6.2A
I D = 10.3A
V GS = 10V
Gate-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
Q G Total Gate Charge (nC)
0
20
1
20
V DS = 50V
VDS= 20V
6.0V
40
≤ 60µs PULSE WIDTH
Tj = 150°C
60
10
80 100 120 140 160
40
TOP
BOTTOM
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VGS
15V
10V
8.0V
7.0V
6.0V
100
60