IRF6644 International Rectifier, IRF6644 Datasheet - Page 8

• Manufacturer Part Number: IRF6644
• Description: MOSFET N-CH 100V DIRECTFET-MN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6644

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13 mOhm @ 10.3A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 10.3A
• Vgs(th) (max) @ Id: 4.8V @ 150µA
• Gate Charge (qg) @ Vgs: 47nC @ 10V
• Input Capacitance (ciss) @ Vds: 2210pF @ 25V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MN
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13 m Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10.3 A
• Power Dissipation: 2.8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 16 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 26 ns
• Lead Free Status / Rohs Status: No

DirectFET™ Outline Dimension, MN Outline
(Medium Size Can, N-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
IRF6644
DirectFET™ Part Marking
8
NOTE: CONTROLLING
DIMENSIONS ARE IN MM
CODE
A
B
C
D
E
F
G
H
J
K
L
M
N
P
MIN
6.25
3.85
0.35
0.88
0.78
1.38
0.88
0.48
1.16
0.59
0.03
0.08
4.80
2.74
METRIC
DIMENSIONS
MAX
1.42
1.29
6.35
5.05
3.95
0.45
0.92
0.82
0.92
0.52
2.91
0.70
0.08
0.17
0.246
0.189
0.152
0.014
0.034
0.031
0.054
0.034
0.019
0.046
0.109
0.023
0.001
0.003
MIN
IMPERIAL
0.250
0.201
0.156
0.018
0.036
0.032
0.056
0.036
0.020
0.051
0.115
0.028
0.003
0.007
MAX
www.irf.com