IRF6612 International Rectifier, IRF6612 Datasheet

IRF6612

Manufacturer Part Number

IRF6612

Description

MOSFET N-CH 30V 24A DIRECTFET

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF6612.pdf (12 pages)

Specifications of IRF6612

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

3.3 mOhm @ 24A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

24A

Vgs(th) (max) @ Id

2.25V @ 250µA

Gate Charge (qg) @ Vgs

45nC @ 4.5V

Input Capacitance (ciss) @ Vds

3970pF @ 15V

Power - Max

2.8W

Mounting Type

Surface Mount

Package / Case

DirectFET™ Isometric MX

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

IRF6612TR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF6612TRPBF

Manufacturer:

MAXIM

Quantity:

1 425

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF6612TRPBF

Manufacturer:

Quantity:

20 000

Company:

H&T Electronics

Part Number:

IRF6612TRPBF

Quantity:

1 838

Current page: 1 of 12
Download datasheet (627Kb)

www.irf.com

Applicable DirectFET Package/Layout Pad (see p.8,9 for details)

Description

The IRF6612 combines the latest HEXFET® power MOSFET silicon technology with the advanced DirectFET

ing to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The

DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment

and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the

manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in

power systems, IMPROVING previous best thermal resistance by 80%.

The IRF6612 balances both low resistance and low charge along with ultra low package inductance to reduce both

conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters

that power the latest generation o f processors operating at higher frequencies. The IRF6612 has been optimized for

parameters that are critical in synchronous buck converters including R

immunity to minimize losses in the synchronous FET socket.

Absolute Maximum Ratings

Thermal Resistance

Notes through

STG

θJA

θJC

θJ-PCB

Techniques

RoHS compliant containing no lead or bromide

Application Specific MOSFETs

Ideal for CPU Core DC-DC Converters

Low Conduction Losses

Low Switching Losses

Low Profile (<0.7 mm)

Dual Sided Cooling Compatible

Compatible with Existing Surface Mount

@ T

= 25°C

= 70°C

= 25°C

= 70°C

= 25°C

Power Dissipation

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Junction-to-Ambient

Junction-to-Case

Junction-to-PCB Mounted

are on page 10

Parameter

@ 10V

IRF6612/IRF6612TR1

30V

DSS

DS(on)

Typ.

12.5

–––

1.0

4.4mΩ@V

3.3mΩ@V

DirectFET™ Power MOSFET

, gate charge and Cdv/dt-induced turn on

-40 to + 150

DS(on)

Max.

0.022

136

190

±20

2.8

1.8

max

= 4.5V

= 10V

Max.

–––

1.4

DirectFET™ ISOMETRIC

Qg(typ.)

30nC

Units

W/°C

°C/W

°C

packag-

11/17/05

Related parts for IRF6612

IRF6612 Summary of contents

Page 1

... The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation o f processors operating at higher frequencies. The IRF6612 has been optimized for parameters that are critical in synchronous buck converters including R immunity to minimize losses in the synchronous FET socket ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

VGS TOP 10V 7.0V 4.5V 4.0V 3.5V 1000 3.2V 2.9V BOTTOM 2.7V 100 10 2.7V ≤ 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Typical Output Characteristics 1000 10V ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = 10000 C iss C oss 1000 ...

Page 5

Case Temperature (°C) Maximum Drain Current vs. Case Temperature 100 D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 0.1 SINGLE PULSE 0.01 ( ...

Page 6

125° 25° GS, Gate -to -Source Voltage (V) On-Resistance vs. Gate Voltage 15V DRIVER ...

Page 7

D.U.T + ƒ • • - • + ‚ - • • • SD • Vds Vgs(th) Qgs1 Qgs2 www.irf.com Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ Current - + D.U.T. V Waveform DS Re-Applied ...

Page 8

DIMENSIONS IMPERIAL METRIC CODE MIN MAX MIN MAX 6.35 0.246 A 6.25 0.250 5.05 0.189 B 4.80 0.201 3.95 0.152 C 3.85 0.156 0.45 0.014 D 0.35 0.018 0.72 E 0.68 0.027 0.028 0.72 0.027 F 0.68 0.028 ...

Page 9

D D www.irf.com G = GATE D = DRAIN S = SOURCE ...

Page 10

... NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6612). For 1000 parts on 7" reel, order IRF6612TR1 STANDARD OPTION (QTY 4800) CODE MIN A 330.0 B 20.2 C 12.8 D 1.5 E 100.0 F N.C G 12.4 H 11.9 10 REEL DIMENSIONS TR1 OPTION (QTY 1000) METRIC IMPERIAL ...

Page 11

Notes: ‚ Starting T = 25° 0.20mH 25Ω 19A ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ Surface mounted on 1 in. square Cu board. www.irf.com … ...

Page 12

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

Related keywords

irf6611
irf6648
irf6646
irf6612
irf6644
irf6635
irf6620
irf6619
irf6613
irf6614
irf6618
irf6617
irf6616
irf6645
irf6668
irf6618tr1
irf6612tr1
irf6618tr1pbf
irf6612tr1pbf
IRF6612 datasheet
IRF6612 data sheet
IRF6612 pdf datasheet
IRF6612 component
IRF6612 part
IRF6612 distributor
IRF6612 RoHS
IRF6612 datasheet download