IRF6619 International Rectifier, IRF6619 Datasheet

IRF6619

Manufacturer Part Number

IRF6619

Description

MOSFET N-CH 20V 30A DIRECTFET

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF6619.pdf (10 pages)

Specifications of IRF6619

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

2.2 mOhm @ 30A, 10V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

30A

Vgs(th) (max) @ Id

2.45V @ 250µA

Gate Charge (qg) @ Vgs

57nC @ 4.5V

Input Capacitance (ciss) @ Vds

5040pF @ 10V

Power - Max

2.8W

Mounting Type

Surface Mount

Package / Case

DirectFET™ Isometric MX

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

IRF6619TR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF6619

Manufacturer:

Quantity:

14 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF6619TR1PBF

Manufacturer:

Quantity:

654

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF6619TR1PBF

Manufacturer:

Quantity:

20 000

Current page: 1 of 10
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Description

The IRF6619 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET

lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with

existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-

niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual

sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.

The IRF6619 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching

losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors

operating at higher frequencies. The IRF6619 has been optimized for parameters that are critical in synchronous buck operating from 12 volt

buss converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6619 offers particularly low Rds(on) and high

Cdv/dt immunity for synchronous FET applications.

Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

‚

Notes:

www.irf.com

Absolute Maximum Ratings

AS (Thermally limited)

Low Profile (<0.7 mm)

Dual Sided Cooling Compatible

Ultra Low Package Inductance

Optimized for High Frequency Switching above 1MHz

Ideal for CPU Core DC-DC Converters

Optimized for Sync. FET socket of Sync. Buck Converter

Low Conduction Losses

Compatible with existing Surface Mount Techniques

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Repetitive rating; pulse width limited by max. junction temperature.

@ T

= 25°C

= 70°C

= 25°C

6.0

5.0

4.0

3.0

2.0

1.0

Fig 1. Typical On-Resistance Vs. Gate Voltage

2.0

V GS , Gate-to-Source Voltage (V)

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

4.0

T J = 25°C

T J = 125°C

6.0

Ãe

8.0

I D = 30A

Parameter

@ 10V

10.0

kÃ

(

Package Limited

„

†

‰

20V max ±20V max 1.65mΩ@ 10V 2.2mΩ@ 4.5V

24A, V

38nC

Limited by T

Surface mounted on 1 in. square Cu board, steady state.

g tot

DSS

measured with thermocouple mounted to top (Drain) of part.

Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage

)

=10V. Part not recommended for use above this value.

13nC

Jmax

I D = 16A

, starting T

DirectFET™ Power MOSFET ‚

See Fig. 14, 15, 17a, 17b,

Q G Total Gate Charge (nC)

3.5nC

gs2

= 25°C, L = 0.86mH, R

Max.

V DS = 16V

VDS= 10V

150

240

±20

DS(on)

18nC

IRF6619

packaging to achieve the

DirectFET™ ISOMETRIC

22nC

oss

= 25Ω, I

DS(on)

100

Units

2.0V

gs(th)

9/30/05

Related parts for IRF6619

IRF6619 Summary of contents

Page 1

... IMPROVING previous best thermal resistance by 80%. The IRF6619 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

Absolute Maximum Ratings Power Dissipation 25° 70°C Power Dissipation 25°C Power Dissipation D C Peak Soldering Temperature Operating Junction and J T Storage Temperature ...

Page 4

PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 100 150° 25° -40°C 10.0 ...

Page 5

150° 25°C 10 -40°C 1.0 0.1 0.2 0.6 1 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 180 LIMITED BY PACKAGE 160 140 120 ...

Page 6

Starting Junction Temperature (°C) Fig 15. Maximum Avalanche Energy vs. Temperature 1000 800 600 400 200 Starting Junction Temperature (°C) Fig 16. ...

Page 7

D.U.T + ƒ • • - • + ‚ - R • • • • Fig 20. DirectFET™ Substrate and PCB Layout, MX Outline (Medium Size Can, X-Designation). Please see DirectFET application note AN-1035 for all details regarding the ...

Page 8

DirectFET™ Outline Dimension, MX Outline (Medium Size Can, X-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DirectFET™ Part Marking 8 DIMENSIONS METRIC IMPERIAL MIN ...

Page 9

... DirectFET™ Tape & Reel Dimension (Showing component orientation). IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6619). For 1000 parts on 7" reel, order IRF6619TR1 REEL DIMENSIONS STANDARD OPTION (QTY 4800) ...

Page 10

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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