IRF6626 International Rectifier, IRF6626 Datasheet
IRF6626
Specifications of IRF6626
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IRF6626 Summary of contents
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... The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6626 has been optimized for parameters that are critical in synchronous buck operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket. ...
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... IRF6626 Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...
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... Ci= τi/Ri Ci τi/Ri 0.0001 0.001 0. Rectangular Pulse Duration (sec) ‰ T measured with thermocouple incontact with top (Drain) of part. C Š measured at θ ‡ IRF6626 Max. 2.2 1.4 42 270 - 150 Typ. Max. ––– 58 12.5 ––– 20 ––– ––– ...
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... IRF6626 1000 100 10 2.5V 1 ≤ 60µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 15V ≤ 60µs PULSE WIDTH 100 150° 25° -40° Gate-to-Source Voltage (V) Fig 6. Typical Transfer Characteristics 100000 0V MHZ C iss = SHORTED C rss = C gd ...
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... Fig 13. Threshold Voltage vs. Temperature 100 BOTTOM 13A 100 Starting Junction Temperature (°C) IRF6626 OPERATION IN THIS AREA LIMITED (on) 100µsec 1msec 10msec Ta = 25° 150°C Single Pulse 0.01 0.10 1.00 10. Drain-to-Source Voltage ( 50µA -75 -50 - 100 125 150 Temperature ( ° ...
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... IRF6626 Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µF D.U. 3mA I G Current Sampling Resistors Fig 15a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 16a. Unclamped Inductive Test Circuit V DS D.U Pulse Width < 1µs Duty Factor < 0.1% Fig 17a ...
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... D.U.T. I Waveform SD Reverse Recovery Body Diode Forward Current + D.U.T. V Waveform DS V Re-Applied + Voltage Body Diode - Inductor Curent Ripple ≤ for Logic Level Devices for N-Channel ® HEXFET Power MOSFETs G = GATE D = DRAIN S = SOURCE IRF6626 P. Period V =10V GS Current di/dt Diode Recovery dv/ Forward Drop ...
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... IRF6626 DirectFET™ Outline Dimension, ST Outline (Small Size Can, T-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DirectFET™ Part Marking 8 DIMENSIONS IMPERIAL METRIC MAX MIN ...
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... DirectFET™ Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6626). For 1000 parts on 7" reel, order IRF6626TR1 CODE WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...