IRF3710ZLPBF International Rectifier, IRF3710ZLPBF Datasheet - Page 4

• Manufacturer Part Number: IRF3710ZLPBF
• Description: MOSFET N-CH 100V 59A TO-262
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3710ZLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 59A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 2900pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3710ZLPBF

100000
1000.00
10000
4
100.00
1000
10.00
100
10
1.00
0.10
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
1
0.2
Drain-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
0.4
T J = 175°C
V SD , Source-to-Drain Voltage (V)
Forward Voltage
0.6
V
C
C rss
C
GS = 0V,
oss
iss
= C
= C gd
= C
0.8
ds
T J = 25°C
gs
10
Ciss
Coss
+ C
+ C
f = 1 MHZ
gd
1.0
gd
Crss
, C
ds
1.2
V GS = 0V
SHORTED
1.4
100
1.6
12.0
10.0
1000
8.0
6.0
4.0
2.0
0.0
100
0.1
Fig 8. Maximum Safe Operating Area
10
1
0
Fig 6. Typical Gate Charge vs.
1
I D = 35A
Tc = 25°C
Tj = 175°C
Single Pulse
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
20
Q G Total Gate Charge (nC)
V DS = 80V
V DS = 50V
V DS = 20V
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
40
60
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100
100µsec
1msec
10msec
80
1000
100