IRF3710ZLPBF International Rectifier, IRF3710ZLPBF Datasheet - Page 6

• Manufacturer Part Number: IRF3710ZLPBF
• Description: MOSFET N-CH 100V 59A TO-262
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3710ZLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 59A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 2900pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3710ZLPBF

Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
6
Fig 13a. Basic Gate Charge Waveform
I
AS
12V
V
V
G
GS
R G
20V
V
Same Type as D.U.T.
V DS
GS
Current Regulator
Q
.2 F
GS
t p
t p
50K
3mA
Current Sampling Resistors
I AS
D.U.T
.3 F
0.01
L
I
G
Q
Charge
Q
V
GD
G
(BR)DSS
D.U.T.
I
D
15V
+
-
V
DS
DRIVER
+
-
V DD
A
Fig 14. Threshold Voltage vs. Temperature
5.0
4.0
3.0
2.0
1.0
300
250
200
150
100
50
Fig 12c. Maximum Avalanche Energy
0
-75 -50 -25
25
Starting T J , Junction Temperature (°C)
50
I D = 250µA
vs. Drain Current
0
T J , Temperature ( °C )
75
25
50
100
75 100 125 150 175 200
TOP
BOTTOM 35A
www.irf.com
125
150
I D
15A
25A
175