IXTA160N10T IXYS, IXTA160N10T Datasheet - Page 4

MOSFET N-CH 100V 160A TO-263

IXTA160N10T

Manufacturer Part Number
IXTA160N10T
Description
MOSFET N-CH 100V 160A TO-263
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet

Specifications of IXTA160N10T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
160A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
132nC @ 10V
Input Capacitance (ciss) @ Vds
6600pF @ 25V
Power - Max
430W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.007 Ohms
Drain-source Breakdown Voltage
100 V
Continuous Drain Current
160 A
Power Dissipation
430 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
160
Rds(on), Max, Tj=25°c, (?)
0.0070
Ciss, Typ, (pf)
6600
Qg, Typ, (nc)
132
Trr, Typ, (ns)
60
Trr, Max, (ns)
-
Pd, (w)
430
Rthjc, Max, (k/w)
0.35
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
200
180
160
140
120
100
300
250
200
150
100
100
80
60
40
20
50
0
0
3.5
0.4
0
0.5
f = 1 MHz
5
4
Fig. 9. Forward Voltage Drop of
0.6
10
T
Fig. 7. Input Admittance
J
4.5
Fig. 11. Capacitance
0.7
= 150ºC
T
- 40ºC
J
Intrinsic Diode
25ºC
= 150ºC
15
V
V
0.8
V
GS
SD
DS
5
- Volts
- Volts
- Volts
0.9
20
5.5
T
J
1
25
= 25ºC
C iss
C oss
C rss
1.1
6
30
1.2
6.5
35
1.3
1.4
40
7
1.00
0.10
0.01
140
120
100
10
80
60
40
20
9
8
7
6
5
4
3
2
1
0
0.0001
0
0
0
V
I
I
D
G
20
DS
= 25A
= 10mA
20
= 50V
Fig. 12. Maximum Transient Thermal
0.001
40
Fig. 8. Transconductance
60
40
Q
Fig. 10. Gate Charge
Pulse Width - Seconds
G
80
- NanoCoulombs
I
D
0.01
Impedance
- Amperes
60
100
T
120
J
= - 40ºC
80
0.1
150ºC
IXTA160N10T
25ºC
IXTP160N10T
140
100
160
1
180
120
200
140
10
220

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