IXTA160N10T IXYS, IXTA160N10T Datasheet - Page 5

• Manufacturer Part Number: IXTA160N10T
• Description: MOSFET N-CH 100V 160A TO-263
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTA160N10T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 132nC @ 10V
• Input Capacitance (ciss) @ Vds: 6600pF @ 25V
• Power - Max: 430W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 160 A
• Power Dissipation: 430 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 160
• Rds(on), Max, Tj=25°c, (?): 0.0070
• Ciss, Typ, (pf): 6600
• Qg, Typ, (nc): 132
• Trr, Typ, (ns): 60
• Trr, Max, (ns): -
• Pd, (w): 430
• Rthjc, Max, (k/w): 0.35
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2006 IXYS CORPORATION All rights reserved
170
150
130
110
44
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42
41
40
39
38
90
70
50
30
90
80
70
60
50
40
30
20
25
25
4
Switching Times vs. Gate Resistance
t
T
V
Switching Times vs. Drain Current
r
J
DS
35
I
6
= 125ºC, V
D
Rise Time vs. Junction Temperature
= 50V
= 25A
30
Fig. 17. Resistiv e Turn-off
Fig. 15. Resistiv e Turn-on
45
8
t
Fig. 13. Resistive Turn-on
d(on)
I
GS
D
T
I
T
55
J
D
= 50A
- - - -
J
10
R
= 125ºC
= 10V
35
- Amperes
- Degrees Centigrade
T
G
J
- Ohms
= 25ºC
65
12
T
J
= 125ºC
I
75
D
T
40
J
t
R
V
= 50A
14
f
= 25ºC
G
DS
= 5 Ω , V
= 50V
85
16
t
d(off)
95
I
GS
45
D
= 25A
= 10V
- - - -
R
V
V
18
G
GS
DS
105
= 5 Ω
= 10V
= 50V
20
50
115
65
60
55
50
45
40
35
30
80
77
74
71
68
65
62
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50
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44
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50
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30
90
80
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70
65
60
55
50
45
40
35
30
25
4
25
Switching Times vs. Junction Temperature
I
I
Switching Times v s. Gate Resistance
t
T
V
35
I
I
D
D
f
J
D
D
DS
R
V
V
= 125ºC, V
= 25A
= 50A
6
G
GS
DS
= 25A
= 50A
= 50V
= 5 Ω
45
= 10V
= 50V
Fig. 16. Resistive Turn-off
Fig. 18. Resistive Turn-off
T
30
t
8
J
d(off)
Rise Time vs. Drain Current
- Degrees Centigrade
Fig. 14. Resistive Turn-on
55
GS
- - - -
= 10V
10
R
65
G
I
- Ohms
D
35
- Amperes
75
12
t
R
V
f
G
DS
= 5 Ω , V
= 50V
85
I
D
14
= 25A
IXYS REF:T_160N10T (5V) 6-15-06.xls
t
d(off)
40
95
GS
IXTP160N10T
IXTA160N10T
16
= 10V
- - - -
105
I
D
18
T
115 125
= 50A
J
T
J
= 25ºC
45
= 125ºC
20
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190
175
160
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130
115
100
85
70
55
40
120
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110
105
100
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