IRFB4310ZPBF International Rectifier, IRFB4310ZPBF Datasheet

MOSFET N-CH 100V 120A TO-220AB

IRFB4310ZPBF

Manufacturer Part Number
IRFB4310ZPBF
Description
MOSFET N-CH 100V 120A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets
1.IRFSL4310ZPBF.pdf (11 pages)
2.IRFB4310ZPBF.pdf (3 pages)

Specifications of IRFB4310ZPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 150µA
Gate Charge (qg) @ Vgs
170nC @ 10V
Input Capacitance (ciss) @ Vds
6860pF @ 50V
Power - Max
250W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
120 A
Gate Charge, Total
120 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
250 W
Resistance, Drain To Source On
4.8 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
55 ns
Time, Turn-on Delay
20 ns
Transconductance, Forward
150 S
Voltage, Breakdown, Drain To Source
100 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
127 A
Mounting Style
Through Hole
Gate Charge Qg
120 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
IRFB4310ZPBF
Manufacturer:
IR
Quantity:
8 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRFB4310ZPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Amily Shenzhen XNWY Technology Co., Ltd Amily Shenzhen XNWY Technology Co., Ltd
Part Number:
IRFB4310ZPBF
0
Company:
H&T Electronics H&T Electronics
Part Number:
IRFB4310ZPBF
Quantity:
9 000
Company:
H&T Electronics H&T Electronics
Part Number:
IRFB4310ZPBF
Quantity:
8 000
Applications
l
l
l
l
Benefits
l
l
l
l
www.irf.com
Absolute Maximum Ratings
I
I
I
I
P
V
dv/dt
T
T
Avalanche Characteristics
E
I
E
Thermal Resistance
R
R
R
R
D
D
D
DM
AR
D
GS
J
STG
AS (Thermally limited)
AR
θJC
θCS
θJA
θJA
@ T
@ T
@ T
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
SOA
@T
Symbol
Symbol
C
C
C
C
= 25°C
= 100°C
= 25°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current d
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery f
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Single Pulse Avalanche Energy e
Avalanche Current c
Repetitive Avalanche Energy g
Junction-to-Case k
Case-to-Sink, Flat Greased Surface , TO-220
Junction-to-Ambient, TO-220 k
Junction-to-Ambient (PCB Mount) , D
Parameter
Parameter
GS
GS
GS
@ 10V (Silicon Limited)
@ 10V (Silicon Limited)
@ 10V (Wire Bond Limited)
2
Pak jk
G
D
IRFB4310ZPbF
TO-220AB
G ate
G
G
D
S
D
S
See Fig. 14, 15, 22a, 22b,
Typ.
0.50
–––
–––
–––
V
R
I
I
D
D
10lbxin (1.1Nxm)
DSS
DS(on)
-55 to + 175
(Silicon Limited)
(Package Limited)
IRFS4310ZPbF
D
Drain
127c
Max.
90c
HEXFET Power MOSFET
± 20
120
560
250
300
130
1.7
18
D
D
IRFSL4310ZPbF
2
Pak
G
IRFB4310ZPbF
IRFS4310ZPbF
typ.
D
max.
S
Max.
–––
0.6
62
40
IRFSL4310ZPbF
D
Source
127A c
4.8m :
6.0m :
TO-262
120A
100V
S
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
G
9/18/09
D
1
S

Related parts for IRFB4310ZPBF

Image
Part Number
Description
Manufacturer
Datasheet
Request R
IRFB4310
Part Number:
IRFB4310
Description:
Manufacturer:
International Rectifier Corp.
Datasheet:
IRFB4310.pdf (11 pages)
80CNQ045
Part Number:
80CNQ045
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
80CNQ045.pdf (6 pages)
82CNQ030
Part Number:
82CNQ030
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
82CNQ030.pdf (6 pages)
85CNQ015
Part Number:
85CNQ015
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
85CNQ015.pdf (8 pages)
200CNQ035
Part Number:
200CNQ035
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
200CNQ035.pdf (5 pages)
120NQ045
Part Number:
120NQ045
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
120NQ035R.pdf (5 pages)
400CNQ045
Part Number:
400CNQ045
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
400CNQ045.pdf (4 pages)
63CNQ100
Part Number:
63CNQ100
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
63CNQ100.pdf (2 pages)
123NQ080
Part Number:
123NQ080
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
123NQ080.pdf (5 pages)
301CNQ045
Part Number:
301CNQ045
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
301CNQ045.pdf (5 pages)
125NQ015
Part Number:
125NQ015
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
125NQ015.pdf (4 pages)
301CNQ040
Part Number:
301CNQ040
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
301CNQ045.pdf (5 pages)
123NQ100
Part Number:
123NQ100
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
123NQ080.pdf (5 pages)
241NQ045
Part Number:
241NQ045
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
241NQ045.pdf (5 pages)
181NQ045
Part Number:
181NQ045
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
181NQ045.pdf (4 pages)

IRFB4310ZPBF Summary of contents

Page 1

... Junction-to-Ambient (PCB Mount θJA www.irf.com G D TO-220AB IRFB4310ZPbF G G ate Parameter @ 10V (Silicon Limited 10V (Silicon Limited 10V (Wire Bond Limited) GS Parameter 2 Pak jk IRFB4310ZPbF IRFS4310ZPbF IRFSL4310ZPbF HEXFET Power MOSFET V D DSS R typ. 4.8m : DS(on) max. 6. 127A c D (Silicon Limited (Package Limited) ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ΔV /ΔT Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...

Page 3

VGS TOP 15V 10V 8.0V 6.0V 5.5V 5.0V 100 4.8V BOTTOM 4.5V 10 4.5V ≤ 60μs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 T J ...

Page 4

175°C 100 25° 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 140 LIMITED BY ...

Page 5

D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Duty Cycle = Single Pulse 10 1 Allowed avalanche Current vs avalanche ...

Page 6

Temperature ( °C ) Fig 16. Threshold Voltage Vs. Temperature 100 200 300 400 500 600 ...

Page 7

D.U.T + ƒ ‚ -  • • • • Fig 21 D.U 20V V GS 0.01 Ω Fig 22a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % ...

Page 8

EXAMPLE: T HIS IS AN IRF 1010 LOT CODE 1789 AS S EMBLED ON WW 19, 2000 EMBLY LINE "C" Note: "P" embly line pos ition indicates "Lead - Free" TO-220AB packages ...

Page 9

TO-262 Package Outline TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L www.irf.com (Dimensions are shown in millimeters (inches)) LOT CODE 1789 INT ERNATIONAL ASS EMBLED ON WW 19, 1997 RECTIFIER SEMBLY LINE "C" LOGO ASSEMBLY ...

Page 10

T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 EMBLY LINE "L" T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ...

Page 11

TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. IR WORLD HEADQUARTERS: 233 ...

Related keywords