IRFB4310ZPBF International Rectifier, IRFB4310ZPBF Datasheet - Page 4

• Manufacturer Part Number: IRFB4310ZPBF
• Description: MOSFET N-CH 100V 120A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB4310ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Input Capacitance (ciss) @ Vds: 6860pF @ 50V
• Power - Max: 250W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 120 A
• Gate Charge, Total: 120 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 250 W
• Resistance, Drain To Source On: 4.8 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 55 ns
• Time, Turn-on Delay: 20 ns
• Transconductance, Forward: 150 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 127 A
• Mounting Style: Through Hole
• Gate Charge Qg: 120 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
1000
140
120
100
100
0.1
80
60
40
20
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
0
1
Fig 11. Typical C
0.2
25
0
Fig 7. Typical Source-Drain Diode
Fig 9. Maximum Drain Current vs.
0.4
T J = 175°C
V SD , Source-to-Drain Voltage (V)
50
V DS, Drain-to-Source Voltage (V)
0.6
20
T C , Case Temperature (°C)
Case Temperature
Forward Voltage
0.8
75
T J = 25°C
LIMITED BY PACKAGE
40
1.0
OSS
100
1.2
Stored Energy
60
125
1.4
V GS = 0V
1.6
150
80
1.8
175
2.0
100
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
10000
1000
100
130
120
110
100
600
500
400
300
200
100
0.1
10
90
1
0
Fig 10. Drain-to-Source Breakdown Voltage
Fig 8. Maximum Safe Operating Area
0.1
-60 -40 -20 0
25
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 5mA
Starting T J , Junction Temperature (°C)
V DS , Drain-toSource Voltage (V)
50
T J , Junction Temperature (°C)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1
20 40 60 80 100 120 140 160 180
75
100
1msec
10msec
TOP
BOTTOM
10
125
DC
100μsec
11A
75A
19A
150
I D
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100
175