RHP020N06T100 Rohm Semiconductor, RHP020N06T100 Datasheet - Page 3

• Manufacturer Part Number: RHP020N06T100
• Description: MOSFET N-CH 60V 2A SOT-89
• Manufacturer: Rohm Semiconductor

Specifications of RHP020N06T100

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 200 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 140pF @ 10V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2 A
• Power Dissipation: 2000 mW
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: RHP020N06T100TR

RHP020N06
○
c
www.rohm.com
Electrical characteristics curves
2009 ROHM Co., Ltd. All rights reserved.
0.01
0.01
10
0.1
0.1
10
10
8
6
4
2
0
1
1
0.01
0.01
Fig.4 Static Drain-Source On-State
Fig.7 Static Drain-Source On-State
0
V
Pulsed
Ta= 25°C
Pulsed
V
V
V
Fig.1 Typical Output Characteristics(Ⅰ)
GS
DRAIN-SOURCE VOLTAGE : V
GS
GS
GS
DRAIN-CURRENT : I
DRAIN-CURRENT : I
= 4.0V
Resistance vs. Drain Current(Ⅰ)
Resistance vs. Drain Current(Ⅳ)
= 3.5V
= 2.8V
= 2.4V
0.2
0.1
0.1
V
V
V
0.4
V
GS
GS
GS
GS
= 5.0V
= 4.5V
= 4.0V
= 10V
V
V
V
GS
GS
GS
0.6
= 4.0V
= 4.5V
= 10V
D
D
Ta= -25°C
Ta=125°C
1
[A]
[A]
1
Ta=75°C
Ta=25°C
Ta=25°C
Pulsed
0.8
DS
[V]
10
10
1
0.01
10
0.1
0.1
10
10
8
6
4
2
0
1
1
0.01
0.01
0
V
Pulsed
Fig.5 Static Drain-Source On-State
V
Pulsed
DS
GS
Fig.2 Typical Output Characteristics(Ⅱ)
= 10V
Fig.8 Forward Transfer Admittance
DRAIN-SOURCE VOLTAGE : V
= 10V
2
Resistance vs. Drain Current(Ⅱ)
DRAIN-CURRENT : I
DRAIN-CURRENT : I
vs. Drain Current
V
0.1
0.1
GS
= 3.0V
4
3/4
V
V
GS
GS
= 10V
= 5.0V
V
6
GS
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
V
V
= 4.5V
GS
GS
1
1
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
= 4.0V
= 2.4V
Ta=25°C
Pulsed
D
8
[A]
D
[A]
DS
10
10
10
[V]
0.001
0.01
0.01
0.1
10
10
0.1
10
1
0
0
1
1
Fig.6 Static Drain-Source On-State
0.01
0
V
Pulsed
0
V
Pulsed
V
Pulsed
DS
Ta= - 25°C
Ta= 125°C
GS
Fig.3 Typical Transfer Characteristics
GS
Ta= 75°C
Ta= 25°C
GATE-SOURCE VOLTAGE : V
DRAIN-CURRENT : I
SOURCE-DRAIN VOLTAGE : V
= 10V
= 4.5V
=0V
Resistance vs. Drain Current(Ⅲ)
Fig.9 Reverse Drain Current
1
0.1
0.5
vs. Sourse-Drain Voltage
2
D
2009.03 - Rev.A
[A]
1
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Ta=125°C
Ta=-25°C
3
Ta=75°C
Ta=25°C
Data Sheet
GS
SD
[V]
[V]
1.5
10
4