TPCA8051-H(TE12L,Q Toshiba, TPCA8051-H(TE12L,Q Datasheet - Page 25

• Manufacturer Part Number: TPCA8051-H(TE12L,Q
• Description: MOSFET N-CH 80V 28A 8-SOP ADV
• Manufacturer: Toshiba

Specifications of TPCA8051-H(TE12L,Q

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 2.3V @ 1mA
• Mounting Type: Surface Mount
• Package / Case: 8-SOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -
• Gate Charge (qg) @ Vgs: -
• Rds On (max) @ Id, Vgs: -
• Other names: TPCA8051-HTE12LQTR

The DTMOS devices employ a new super-junction structure that enables an ultra-low-ON resistance with the maximum V
rating of 600 V. The DTMOS Series aids in reduction of power consumption and miniaturization of electronic equipment.
●
●
●
*: Test conditions: TK20J60U: V
Diode forward voltage
Gate threshold voltage
Gate leakage current
Drain cut-off current
breakdown voltage
Super-Junction DTMOS Series (V
Total gate charge
●
●
Conventional MOSFET (π-MOSVI) Devices (600 V/20 A)
Features
Performance Comparisons Between the DTMOS and
Product Lineup
ON-resistance
Characteristic
TK12A60U
TK12D60U
TK12J60U
TK12X60U
TK15A60U
TK15D60U
TK15J60U
TK15X60U
TK20A60U
TK20D60U
TK20J60U
TK20X60U
TK40J60T
TK40J60U
TK40M60U
TK50J60U
TK13A65U
TK13J65U
TK17A65U
TK17J65U
Drain-source
Drain-source
Part Number
Low ON-resistance TK50J60T: 65 mΩ (max) @V
Low gate charge TK20A60U: Qg = 27 nC typ., 600 V / 20 A
*
*
*
*
V
Symbol
R
± I
(BR)DSS
V
I
DS(ON)
DSS
V
Q
DSF
GSS
th
g
V
Absolute Maximum Ratings
DSS
600
650
GS
(V)
V
V
= ± 30 V, 2SK3911: V
V
GS
I
V
V
DD
I
D
DS
DR
DS
GS
= 10 mA, V
condition*, V
Test Conditions
= 400 V, V
= 600 V, V
= 20 A, V
Part Number
= 10 V, I
= 10 V, I
I
D
Ratings
Series
= 20 A
D
I
D
GS
D
GS
GS
GS
12
12
12
12
15
15
15
15
20
20
20
20
40
40
40
50
13
13
17
17
= 1 mA
= 10 A
(A)
DS
= 10 V
= 0 V
DSS
= 0 V
= 0 V
= 0 V
= 600, 650 V)
GS
= ± 25 V
Min
600
3.0
—
—
—
—
—
R
GS
600 V/20 A
TK20J60U
DS(ON)
DTMOSII
V
0.165 0.19
GS
= 10 V, I
Typ.
27
0.065
—
—
—
—
—
0.42
0.19
0.19
0.19
0.20
0.08
0.08
0.08
0.38
0.38
0.26
0.26
0.4
0.4
0.4
0.3
0.3
0.3
0.3
= 10 V
Max (Ω)
Max
–1.7
100
± 1
5.0
—
—
D
= 25 A
Min
600
2.0
—
—
—
—
—
600 V/20 A
π-MOSVI
2SK3911
0.22
Typ.
60
—
—
—
—
—
Q
(nC)
(57)
(57)
g
14
14
14
14
17
17
17
17
27
27
27
27
67
67
17
17
27
27
Typ.
± 10
0.32
–1.7
Max
100
4.0
—
—
Unit
μA
μA
nC
V
V
Ω
V
●
*Ron x Qg is a figure-of-merit index for the switching
14
12
10
C
speed of MOSFETs.
(3600)
(3600)
8
6
4
2
0
iss
1470
1470
1470
1470
3900
4050
1470
1470
(pF)
Ron x Qg, the product of ON-resistance
and total gate charge, is reduced by
62%, compared with the conventional
MOSFETs with the same chip size.
720
720
720
720
950
950
950
950
950
950
Figure-of-Merit (FOM) Comparison
Typ.
π -MOS
VI
TO-220SIS
TO-220(W)
TO-3P(N)
TFP
TO-220SIS
TO-220(W)
TO-3P(N)
TFP
TO-220SIS
TO-220(W)
TO-3P(N)
TFP
TO-3P(N)
TO-3P(N)
TO-3P(N)
TO-3P(N)
TO-220SIS
TO-3P(N)
TO-220SIS
TO-3P(N)
Package
DTMOS
reduction
62%
I
*
: Under development
DTMOS
reduction
DTMOSII
DTMOSI
DTMOSII
Series
15%
II
DSS
25
–