MOSFET N-CHAN 50V SOT23-3

BSS138TC

Manufacturer Part NumberBSS138TC
DescriptionMOSFET N-CHAN 50V SOT23-3
ManufacturerDiodes Zetex
BSS138TC datasheet
 


Specifications of BSS138TC

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs3.5 Ohm @ 220mA, 10VDrain To Source Voltage (vdss)50V
Current - Continuous Drain (id) @ 25° C200mAVgs(th) (max) @ Id1.5V @ 250µA
Input Capacitance (ciss) @ Vds50pF @ 10VPower - Max300mW
Mounting TypeSurface MountPackage / CaseSOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS StatusLead free / RoHS CompliantGate Charge (qg) @ Vgs-
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Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
SOT23
Top View
Ordering Information
(Note 3)
Part Number
BSS138-7-F
Notes:
1. No purposefully added lead. Halogen and Antimony Free.
2. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year
1998
1999
2000
Code
J
K
L
Month
Jan
Feb
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Code
1
2
BSS138
Document number: DS30144 Rev. 14 - 2
N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
Case: SOT23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Drain
Gate
Source
Equivalent Circuit
Case
SOT23
K38 = Product Type Marking Code
YM = Date Code Marking
K38
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
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2002
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N
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R
S
Apr
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www.diodes.com
D
G
S
Top View
Packaging
3000/Tape & Reel
O
Fire Retardants.
2
3
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2007
2008
2009
2010
2011
T
U
V
W
X
Aug
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9
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© Diodes Incorporated
BSS138
2012
Y
Z
Dec
D
January 2011

BSS138TC Summary of contents

  • Page 1

    Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) • "Green" Device (Note 2) • Qualified to AEC-Q101 ...

  • Page 2

    Maximum Ratings @T = 25°C unless otherwise specified A Characteristic Drain-Source Voltage ≤ 20KΩ Drain-Gate Voltage R GS Gate-Source Voltage Drain Current Thermal Characteristics @T A Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient (Note 4) Operating and ...

  • Page 3

    T , JUNCTION TEMPERATURE (°C) j Fig. 3 Drain-Source On-Resistance vs. Junction Temperature 2. ...

  • Page 4

    C ° 0. ° 0.001 0 0.2 0.4 0 DIODE FORWARD VOLTAGE (V) SD Fig. 9 Body Diode Current vs. Body Diode Voltage Package Outline Dimensions ...

  • Page 5

    DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY ...