IRF610SPBF Vishay, IRF610SPBF Datasheet
IRF610SPBF
Specifications of IRF610SPBF
Related parts for IRF610SPBF
IRF610SPBF Summary of contents
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... Q (nC) gd Configuration 2 D PAK (TO-263 ORDERING INFORMATION 2 Package D PAK (TO-263) IRF610SPbF Lead (Pb)-free SiHF610S-E3 IRF610S SnPb SiHF610S Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS T PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current Linear Derating Factor e Linear Derating Factor (PCB Mount) ...
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... IRF610S, SiHF610S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient c (PCB Mount) Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
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... C 3.5 3.0 2.5 2.0 4.5 V 1.5 1.0 0.5 20 µs Pulse Width T = 150 ° 91024_04 Fig Normalized On-Resistance vs. Temperature = 150 °C C IRF610S, SiHF610S Vishay Siliconix 20 µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 100 120 140 160 T Junction Temperature (° ...
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... IRF610S, SiHF610S Vishay Siliconix 300 MHz iss gs 250 rss oss 200 C 150 C 100 Drain-to-Source Voltage ( 91024_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 3 100 Total Gate Charge (nC) 91024_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss oss rss 10 1 91024_07 Fig Typical Source-Drain Diode Forward Voltage ...
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... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91024 S09-0071-Rev. A, 02-Feb-09 125 150 Single Pulse (Thermal Response Rectangular Pulse Duration ( IRF610S, SiHF610S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
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... IRF610S, SiHF610S Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 140 120 100 100 Starting T , Junction Temperature (°C) 91024_12c J Fig. 12c - Maximum Avalanche Energy vs. Drain Current I D Top 1.5 A 2.1 A Bottom 3.3 A 125 150 Current regulator Same type as D.U.T. ...
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... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91024. Document Number: 91024 S09-0071-Rev ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...