SI7461DP-T1-GE3 Vishay, SI7461DP-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI7461DP-T1-GE3
• Description: MOSFET P-CH 60V 8.6A PPAK 8SOIC
• Manufacturer: Vishay

Specifications of SI7461DP-T1-GE3

• Transistor Polarity: P Channel
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 11.5mohm
• Rds(on) Test Voltage Vgs: -10V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14.5 mOhm @ 14.4A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 8.6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 190nC @ 10V
• Power - Max: 1.9W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Continuous Drain Current Id: -14.4A
• Threshold Voltage Vgs Typ: -3V
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7461DP-T1-GE3TR

Si7461DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
www.vishay.com
4
0.01
- 0.2
- 0.4
0.1
0.8
0.6
0.4
0.2
0.0
2
1
10
- 50
- 4
0.02
0.05
0.2
0.1
Duty Cycle = 0.5
- 25
0
10
Threshold Voltage
T
J
- 3
2 5
- Temperature (°C)
5 0
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Ambient
Limited by R
I
0.01
D
100
0.1
10
7 5
= 250 µA
1
0.1
10
- 2
Limited
* V
100
I
D(on)
GS
DS(on)
Single Pulse
T
A
> minimum V
125
V
= 25 °C
DS
*
Safe Operating Area
Square Wave Pulse Duration (s)
- Drain-to-Source Voltage (V)
150
1
10
- 1
GS
at which R
BVDSS Limited
DS(on)
10
1
is specified
100
80
60
40
20
0
0.01
I
DM
Limited
Single Pulse Power, Junction-to-Ambient
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
100
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0.1
P
DM
JM
-
T
t
A
1
= P
Time (s)
t
2
DM
S10-2244-Rev. G, 04-Oct-10
1
Z
thJA
Document Number: 72567
thJA
100
t
t
1
2
(t)
= 52 °C/W
10
600
100