IRF634SPBF Vishay, IRF634SPBF Datasheet - Page 3

• Manufacturer Part Number: IRF634SPBF
• Description: MOSFET N-CH 250V 8.1A D2PAK
• Manufacturer: Vishay

Specifications of IRF634SPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 5.1A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 8.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 41nC @ 10V
• Input Capacitance (ciss) @ Vds: 770pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.45 Ohm @ 10 V
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8.1 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 8.1A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 450mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF634SPBF

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91035
S10-2695-Rev. B, 29-Nov-10
SPECIFICATIONS (T
PARAMETER
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
91035_01
10
10
Fig. 1 - Typical Output Characteristics, T
1
0
10
Top
Bottom
-1
V
DS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V
GS
, Drain-to-Source Voltage (V)
10
J
0
= 25 °C, unless otherwise noted)
a
20 µs Pulse Width
T
C
=
10
25 °C
1
SYMBOL
V
I
Q
t
SM
I
t
SD
on
4.5 V
S
rr
rr
C
= 25 °C
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
J
= 25 °C, I
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
J
= 25 °C, I
TEST CONDITIONS
F
= 5.6 A, dI/dt = 100 A/μs
91035_02
S
= 8.1 A, V
Fig. 2 - Typical Output Characteristics, T
10
10
1
0
Top
Bottom
GS
G
= 0 V
V
DS ,
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V
b
GS
Drain-to-Source Voltage (V)
D
S
IRF634S, SiHF634S
10
b
0
MIN.
-
-
-
-
-
Vishay Siliconix
20 µs Pulse Width
T
TYP.
C
220
1.2
=
10
-
-
-
150 °C
1
www.vishay.com
MAX.
440
4.5 V
C
8.1
2.0
2.4
S
32
and L
= 150 °C
D
UNIT
)
μC
ns
A
V
3