IRFD110 Vishay, IRFD110 Datasheet - Page 6

• Manufacturer Part Number: IRFD110
• Description: MOSFET N-CH 100V 1A 4-DIP
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFD110

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 540 mOhm @ 600mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 180pF @ 25V
• Power - Max: 1.3W
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.54Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 1A
• Power Dissipation: 1.3W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 4
• Package Type: HexDIP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFD110; IRFD111; IRFD112

IRFD110, SiHFD110
Vishay Siliconix
www.vishay.com
6
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
10 V
Fig. 13a - Basic Gate Charge Waveform
AS
V
G
R
10 V
g
Q
GS
V
DS
t
p
Charge
Q
Q
GD
G
I
AS
D.U.T.
0.01 W
L
91127_12c
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
350
300
250
200
150
100
50
0
25
V
DD
+
-
= 25 V
Starting T
V
50
DD
75
J
, Junction Temperature (°C)
100
125
Top
Bottom
Fig. 12b - Unclamped Inductive Waveforms
V
I
150
AS
12 V
DS
Fig. 13b - Gate Charge Test Circuit
V
0.82 A
1.4 A
2.0 A
GS
Same type as D.U.T.
I
Current regulator
D
175
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
t
p
I
G
S10-2466-Rev. C, 25-Oct-10
Document Number: 91127
D.U.T.
V
I
D
DS
+
-
V
V
DD
DS