SI7460DP-T1-GE3 Vishay, SI7460DP-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI7460DP-T1-GE3
• Description: MOSFET N-CH 60V 11A PPAK 8SOIC
• Manufacturer: Vishay

Specifications of SI7460DP-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.6 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Power - Max: 1.9W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 18A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 12mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1V
• Power Dissipation Pd: 5.4W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7460DP-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72126
S09-0227-Rev. D, 09-Feb-09
0.020
0.016
0.012
0.008
0.004
0.000
10
40
10
1
8
6
4
2
0
0.0
0
0
Source-Drain Diode Forward Voltage
V
I
D
DS
0.2
On-Resistance vs. Drain Current
= 18 A
= 30 V
8
V
T
J
SD
20
Q
= 150 °C
g
- Source-to-Drain Voltage (V)
I
0.4
D
- Total Gate Charge (nC)
Gate Charge
- Drain Current (A)
16
0.6
40
24
0.8
V
V
GS
GS
60
T
= 4.5 V
32
J
= 10 V
= 25 °C
1.0
1.2
40
80
0.020
0.016
0.012
0.008
0.004
0.000
5000
4000
3000
2000
1000
1.8
1.6
1.4
1.2
1.0
0.8
0.6
- 5 0
0
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
-
rss
V
I
D
25
GS
= 18 A
10
V
= 10 V
2
V
GS
T
DS
J
0
-
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
Junction T emperature ( °C)
C
20
25
oss
Capacitance
4
I
50
D
Vishay Siliconix
30
= 18 A
C
6
iss
75
Si7460DP
40
www.vishay.com
100
8
50
125
150
10
60
3