SI7460DP-T1-GE3 Vishay, SI7460DP-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI7460DP-T1-GE3
• Description: MOSFET N-CH 60V 11A PPAK 8SOIC
• Manufacturer: Vishay

Specifications of SI7460DP-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.6 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Power - Max: 1.9W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 18A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 12mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1V
• Power Dissipation Pd: 5.4W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7460DP-T1-GE3TR

Si7460DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.4
- 0.8
- 1.2
0.8
0.4
0.0
0.01
- 50
0.1
2
1
10
- 4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
Threshold Voltage
T
I
D
J
= 250 μA
- Temperature (°C)
25
10
- 3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
10
10
100
1
0.1
- 2
Limited by R
Limited
I
125
D(on)
Single Pulse
T
A
Square Wave Pulse Duration (s)
V
= 25 °C
150
DS
DS(on)
Safe Operating Area
- Drain-to-Source Voltage (V)
10
1
*
- 1
BV
DSS
100
10
80
60
40
20
Limited
0
1
0.01
Single Pulse Power, Junction-to-Ambient
Limited
I
DM
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
0.1
100
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
Time (s)
- T
t
1
A
1
S09-0227-Rev. D, 09-Feb-09
= P
t
2
Document Number: 72126
DM
Z
thJA
thJA
100
t
t
1
2
(t)
= 52 °C/W
10
600
100