IRFU224

Manufacturer Part NumberIRFU224
DescriptionMOSFET N-CH 250V 3.8A I-PAK
ManufacturerVishay
IRFU224 datasheet
 

Specifications of IRFU224

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs1.1 Ohm @ 2.3A, 10VDrain To Source Voltage (vdss)250V
Current - Continuous Drain (id) @ 25° C3.8AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs14nC @ 10VInput Capacitance (ciss) @ Vds260pF @ 25V
Power - Max2.5WMounting TypeThrough Hole
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)Transistor PolarityN Channel
Continuous Drain Current Id3.8ADrain Source Voltage Vds250V
On Resistance Rds(on)1.1ohmRds(on) Test Voltage Vgs10V
Threshold Voltage Vgs Typ4VConfigurationSingle
Resistance Drain-source Rds (on)1.1 OhmsDrain-source Breakdown Voltage250 V
Gate-source Breakdown Voltage+/- 20 VContinuous Drain Current3.8 A
Power Dissipation2.5 WMaximum Operating Temperature+ 150 C
Mounting StyleThrough HoleMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusContains lead / RoHS non-compliantOther names*IRFU224
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
Page 1/8

Download datasheet (858Kb)Embed
Next
PRODUCT SUMMARY
V
(V)
DS
R
(Ω)
V
= 10 V
DS(on)
GS
Q
(Max.) (nC)
g
Q
(nC)
gs
Q
(nC)
gd
Configuration
DPAK
IPAK
(TO-252)
(TO-251)
D
D
G
S
G
D S
G
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free and Halogen-free
SiHFR224-GE3
IRFR224PbF
Lead (Pb)-free
SiHFR224-E3
IRFR224
SnPb
SiHFR224
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Linear Derating Factor
e
Linear Derating Factor (PCB Mount)
b
Single Pulse Avalanche Energy
a
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
c
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 50 V; starting T
= 25 °C, L = 14 mH, R
DD
J
≤ 3.8 A, dI/dt ≤ 90 A/μs, V
≤ V
c. I
, T
SD
DD
DS
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91271
S10-1122-Rev. B, 10-May-10
IRFR224, IRFU224, SiHFR224, SiHFU224
Power MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
250
• Dynamic dV/dt Rating
1.1
• Repetitive Avalanche Rated
14
• Surface Mount (IRFR224, SiHFR224)
2.7
• Straight Lead (IRFU224, SiHFU224)
• Available in Tape and Reel
7.8
• Fast Switching
Single
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
D
DESCRIPTION
Third generation Power MOSFETs form Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave solderig techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
S
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
N-Channel MOSFET
DPAK (TO-252)
SiHFR224TR-GE3
a
IRFR224TRPbF
a
SiHFR224T-E3
a
IRFR224TR
a
SiHFR224T
= 25 °C, unless otherwise noted
C
T
= 25 °C
C
V
at 10 V
GS
T
= 100 °C
C
T
= 25 °C
C
e
T
= 25 °C
A
for 10 s
= 25 Ω, I
= 3.8 A (see fig. 12).
g
AS
≤ 150 °C.
J
Vishay Siliconix
device
design,
low
on-resistance
DPAK (TO-252)
IPAK (TO-251)
SiHFR224TRL-GE3
SiHFU224-GE3
a
IRFR224TRLPbF
IRFU224PbF
a
SiHFR224TL-E3
SiHFU224-E3
a
IRFR224TRL
IRFU224
a
SiHFR224TL
SiHFU224
SYMBOL
LIMIT
V
250
DS
V
± 20
GS
3.8
I
D
2.4
I
15
DM
0.33
0.020
E
130
AS
I
3.8
AR
E
4.2
AR
42
P
D
2.5
dV/dt
4.8
T
, T
- 55 to + 150
J
stg
d
260
www.vishay.com
and
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
1

IRFU224 Summary of contents

  • Page 1

    ... Definition 250 • Dynamic dV/dt Rating 1.1 • Repetitive Avalanche Rated 14 • Surface Mount (IRFR224, SiHFR224) 2.7 • Straight Lead (IRFU224, SiHFU224) • Available in Tape and Reel 7.8 • Fast Switching Single • Ease of Paralleling • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION ...

  • Page 2

    ... IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Ambient Maximum Junction-to-Case Note a. When mounted on 1" square PCB ( FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

  • Page 3

    ... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91271 S10-1122-Rev. B, 10-May-10 IRFR224, IRFU224, SiHFR224, SiHFU224 = 25 °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix www.vishay.com 3 ...

  • Page 4

    ... IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91271 S10-1122-Rev. B, 10-May-10 ...

  • Page 5

    ... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91271 S10-1122-Rev. B, 10-May-10 IRFR224, IRFU224, SiHFR224, SiHFU224 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms ...

  • Page 6

    ... IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D ...

  • Page 7

    ... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91271. Document Number: 91271 S10-1122-Rev. B, 10-May-10 IRFR224, IRFU224, SiHFR224, SiHFU224 Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • Low stray inductance • ...

  • Page 8

    ... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...