IRF740STRLPBF Vishay, IRF740STRLPBF Datasheet - Page 5

• Manufacturer Part Number: IRF740STRLPBF
• Description: MOSFET N-CH 400V 10A D2PAK
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRF740STRLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 10A
• Drain Source Voltage Vds: 400V
• On Resistance Rds(on): 550mohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.55 Ohms
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10 A
• Power Dissipation: 3.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.55Ohm
• Drain-source On-volt: 400V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 91055
S-83029-Rev. A, 19-Jan-09
91055_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
10
91055_11
8
6
4
2
0
25
10
0.1
10
-2
1
10
50
D = 0.5
0.05
0.01
T
0.2
0.02
0.1
-5
C
, Case Temperature (°C)
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
100
-4
Single Pulse
(Thermal Response)
125
10
t
1
-3
150
, Rectangular Pulse Duration (S)
10
-2
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
0.1
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
Notes:
1. Duty Factor, D = t
2. Peak T
V
IRF740S, SiHF740S
DS
t
r
1
j
= P
P
DM
DM
D.U.T.
x Z
Vishay Siliconix
R
t
D
1
1
thJC
t
/t
d(off)
2
t
+ T
2
C
t
10
f
+
-
www.vishay.com
V
DD
5