SI7434DP-T1-GE3 Vishay, SI7434DP-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI7434DP-T1-GE3
• Description: MOSFET N-CH 250V 2.3A PPAK 8SOIC
• Manufacturer: Vishay

Specifications of SI7434DP-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 155 mOhm @ 3.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Power - Max: 1.9W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 3.8A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 162mohm
• Rds(on) Test Voltage Vgs: 6V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7434DP-T1-GE3TR

Document Number: 72579
S09-0271-Rev. C, 16-Feb-09
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.30
0.24
0.18
0.12
0.06
0.00
50
10
10
1
8
6
4
2
0
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
= 3.8 A
0.2
On-Resistance vs. Drain Current
= 100 V
V
8
GS
7
V
SD
= 6 V
Q
g
- Source-to-Drain Voltage (V)
T
0.4
I
D
- Total Gate Charge (nC)
J
- Drain Current (A)
= 150 °C
Gate Charge
16
14
0.6
24
21
0.8
V
GS
T
32
28
J
= 10 V
1.0
= 25 °C
1.2
40
35
2500
2000
1500
1000
0.25
0.20
0.15
0.10
0.05
0.00
500
2.5
2.0
1.5
1.0
0.5
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
- 25
GS
= 3.8 A
= 10 V
50
2
V
V
T
DS
0
GS
J
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
C
25
Capacitance
100
rss
4
50
Vishay Siliconix
C
150
C
oss
I
D
6
iss
75
= 3.8 A
Si7434DP
www.vishay.com
100
200
8
125
250
150
10
3