IRF624 Vishay, IRF624 Datasheet - Page 4

• Manufacturer Part Number: IRF624
• Description: MOSFET N-CH 250V 4.4A TO-220AB
• Manufacturer: Vishay

Specifications of IRF624

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.1 Ohm @ 2.6A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 4.4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 260pF @ 25V
• Power - Max: 50W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.1 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.4 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF624

IRF624, SiHF624
Vishay Siliconix
www.vishay.com
4
91029_05
91029_06
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
600
500
400
300
200
100
20
16
12
0
8
4
0
10
0
0
I
D
= 4.4 A
V
2
DS ,
Q
G
Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
V
4
DS
= 50 V
V
V
C
C
C
6
DS
GS
iss
rss
oss
= 125 V
= 0 V, f = 1 MHz
= C
= C
= C
10
8
gs
gd
ds
V
1
DS
+ C
+ C
C
C
C
rss
= 200 V
oss
gd
gd
iss
10
For test circuit
see figure 13
, C
ds
Shorted
12
14
91029_07
91029_08
10
10
10
Fig. 7 - Typical Source-Drain Diode Forward Voltage
0.1
10
1
0
2
5
2
5
2
5
2
1
0.4
0.1
Fig. 8 - Maximum Safe Operating Area
2
V
150
V
5
DS
SD
0.6
Operation in this area limited
°
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
1
C
2
T
T
Single Pulse
0.8
C
J
by R
= 150 °C
5
= 25 °C
10
25
DS(on)
°
C
1.0
2
S-82998-Rev. A, 12-Jan-09
Document Number: 91029
5
10
1.2
2
V
2
GS
10
100
1
10
= 0 V
ms
5
µs
ms
µs
1.4
10
3