IRF624 Vishay, IRF624 Datasheet - Page 6

• Manufacturer Part Number: IRF624
• Description: MOSFET N-CH 250V 4.4A TO-220AB
• Manufacturer: Vishay

Specifications of IRF624

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.1 Ohm @ 2.6A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 4.4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 260pF @ 25V
• Power - Max: 50W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.1 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.4 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF624

IRF624, SiHF624
Vishay Siliconix
www.vishay.com
6
10 V
Fig. 13a - Basic Gate Charge Waveform
V
G
Q
GS
Charge
Q
Q
GD
G
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
91029_12c
120
240
200
160
80
40
0
25
V
DD
Starting T
= 50 V
50
J
, Junction Temperature (°C)
75
100
Top
Bottom
125
12 V
V
Fig. 13b - Gate Charge Test Circuit
GS
Same type as D.U.T.
2.0 A
2.8 A
4.4 A
Current regulator
I
D
150
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
I
G
S-82998-Rev. A, 12-Jan-09
Document Number: 91029
D.U.T.
I
D
+
-
V
DS