MOSFET P-CH 50V 9.9A DPAK

IRFR9020TRL

Manufacturer Part NumberIRFR9020TRL
DescriptionMOSFET P-CH 50V 9.9A DPAK
ManufacturerVishay
IRFR9020TRL datasheet
 


Specifications of IRFR9020TRL

Fet TypeMOSFET P-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs280 mOhm @ 5.7A, 10VDrain To Source Voltage (vdss)50V
Current - Continuous Drain (id) @ 25° C9.9AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs14nC @ 10VInput Capacitance (ciss) @ Vds490pF @ 25V
Power - Max42WMounting TypeSurface Mount
Package / CaseDPak, TO-252 (2 leads+tab), SC-63ConfigurationSingle
Transistor PolarityP-ChannelResistance Drain-source Rds (on)0.28 Ohms
Drain-source Breakdown Voltage- 50 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current9.9 APower Dissipation42 W
Maximum Operating Temperature+ 150 CMounting StyleSMD/SMT
Minimum Operating Temperature- 55 CLead Free Status / RoHS StatusContains lead / RoHS non-compliant
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PRODUCT SUMMARY
V
(V)
DS
R
(Ω)
V
= - 10 V
DS(on)
GS
Q
(Max.) (nC)
g
Q
(nC)
gs
Q
(nC)
gd
Configuration
DPAK
IPAK
(TO-252)
(TO-251)
D
D
S
D S
G
G
ORDERING INFORMATION
Package
DPAK (TO-252)
IRFR9020PbF
Lead (Pb)-free
SiHFR9020-E3
IRFR9020
SnPb
SiHFR9020
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Linear Derating Factor
b
Single Pulse Avalanche Energy
a
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90350
S09-0074-Rev. A, 02-Feb-09
IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
Power MOSFET
FEATURES
• Surface Mountable (Order As IRFR9020, SiHFR9020)
- 50
• Straight Lead Option (Order As IRFU9020, SiHFU9020)
0.28
• Repetitive Avalanche Ratings
14
• Dynamic dV/dt Rating
6.5
• Simple Drive Requirements
6.5
• Ease of Paralleling
Single
• Lead (Pb)-free Available
S
DESCRIPTION
The Power MOSFET technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
G
geometry and unique processing of this latest “State of the
Art” design achieves: very low on-state resistance combined
with high transconductance; superior reverse energy and
diode recovery dV/dt.
The Power MOSFET transistors also feature all of the well
D
established advantages of MOSFET’S such as voltage
P-Channel MOSFET
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
Surface mount packages enhance circuit performance by
reducing stray inductances and capacitance. The TO-252
surface mount package brings the advantages of Power
MOSFET’s to high volume applications where PC Board
surface mounting is desirable. The surface mount option
IRFR9020, SiHFR9020 is provided on 16mm tape. The
straight lead option IRFU9020, SiHFU9020 of the device is
called the IPAK (TO-251).
They are well suited for applications where limited heat
dissipation is required such as, computers and peripherals,
telecommunication equipment, DC/DC converters, and a
wide range of consumer products.
DPAK (TO-252)
a
IRFR9020TRPbF
a
SiHFR9020T-E3
a
IRFR9020TR
a
SiHFR9020T
= 25 °C, unless otherwise noted
C
T
= 25 °C
C
V
at - 10 V
GS
T
= 100 °C
C
Vishay Siliconix
DPAK (TO-252)
IPAK (TO-251)
a
IRFR9020TRLPbF
IRFU9020PbF
a
SiHFR9020TL-E3
SiHFU9020-E3
a
IRFR9020TRL
IRFU9020
a
SiHFR9020TL
SiHFU9020
SYMBOL
LIMIT
V
- 50
DS
V
± 20
GS
- 9.9
I
D
- 6.3
I
- 40
DM
0.33
E
440
AS
I
- 9.9
AR
E
4.2
AR
www.vishay.com
Available
RoHS*
COMPLIANT
UNIT
V
A
W/°C
mJ
A
mJ
1

IRFR9020TRL Summary of contents

  • Page 1

    ... DC/DC converters, and a wide range of consumer products. DPAK (TO-252) a IRFR9020TRPbF a SiHFR9020T-E3 a IRFR9020TR a SiHFR9020T = 25 °C, unless otherwise noted ° 100 °C C Vishay Siliconix DPAK (TO-252) IPAK (TO-251) a IRFR9020TRLPbF IRFU9020PbF a SiHFR9020TL-E3 SiHFU9020-E3 a IRFR9020TRL IRFU9020 a SiHFR9020TL SiHFU9020 SYMBOL LIMIT ± 9 6 0.33 E 440 9 4.2 AR www.vishay.com Available ...

  • Page 2

    ... IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS T PARAMETER Maximum Power Dissipation c Peak Diode Recovery dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14 Starting ° 5.1 mH, R ...

  • Page 3

    ... SYMBOL TEST CONDITIONS MOSFET symbol I S showing the integral reverse junction diode ° 9 ° 9,7 A, dI/dt = 100 A/µ Intrinsic turn-on time is negligible (turn-on is dominated Vishay Siliconix MIN. TYP. MAX 9 6 110 280 b 0.17 0.34 0.85 and L S Fig Typical Saturation Characteristics Fig ...

  • Page 4

    ... IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 Vishay Siliconix Fig Typical Transconductance vs. Drain Current Fig Typical Source-Drain Diode Forward Voltage www.vishay.com 4 Fig Breakdown Voltage vs. Temperature Fig Normalized On-Resistance vs. Temperature Document Number: 90350 S09-0074-Rev. A, 02-Feb-09 ...

  • Page 5

    ... Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 90350 S09-0074-Rev. A, 02-Feb-09 IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 Fig Typical On-Resistance vs. Drain Current Fig Maximum Drain Current vs. Case Temperature Vishay Siliconix www.vishay.com 5 ...

  • Page 6

    ... IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 Vishay Siliconix Fig. 13a - Maximum Avalanche vs. Starting Junction Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration www.vishay.com 6 Fig. 13b - Unclamped Inductive Test Circuit Fig. 13c - Unclamped Inductive Waveforms Document Number: 90350 S09-0074-Rev. A, 02-Feb-09 ...

  • Page 7

    ... Fig. 15a - Switching Time Waveforms Charge Fig. 16a - Basic Gate Charge Waveform Document Number: 90350 S09-0074-Rev. A, 02-Feb-09 IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 t t d(off) f Vishay Siliconix Fig. 15b - Switching Time Test Circuit Fig. 16b - Gate Charge Test Circuit www.vishay.com 7 ...

  • Page 8

    ... Inductor current * V Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?90350. ...

  • Page 9

    ... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...