MOSFET P-CH 60V 8.8A DPAK

IRFR9024TR

Manufacturer Part NumberIRFR9024TR
DescriptionMOSFET P-CH 60V 8.8A DPAK
ManufacturerVishay
IRFR9024TR datasheet
 


Specifications of IRFR9024TR

Fet TypeMOSFET P-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs280 mOhm @ 5.3A, 10VDrain To Source Voltage (vdss)60V
Current - Continuous Drain (id) @ 25° C8.8AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs19nC @ 10VInput Capacitance (ciss) @ Vds570pF @ 25V
Power - Max2.5WMounting TypeSurface Mount
Package / CaseDPak, TO-252 (2 leads+tab), SC-63ConfigurationSingle
Transistor PolarityP-ChannelResistance Drain-source Rds (on)0.28 Ohms
Drain-source Breakdown Voltage- 60 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current8.8 APower Dissipation2.5 W
Maximum Operating Temperature+ 150 CMounting StyleSMD/SMT
Minimum Operating Temperature- 55 CLead Free Status / RoHS StatusContains lead / RoHS non-compliant
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PRODUCT SUMMARY
V
(V)
DS
R
(Ω)
V
= - 10 V
DS(on)
GS
Q
(Max.) (nC)
g
Q
(nC)
gs
Q
(nC)
gd
Configuration
DPAK
IPAK
(TO-252)
(TO-251)
D
D
S
G
D S
G
ORDERING INFORMATION
Package
DPAK (TO-252)
IRFR9024PbF
Lead (Pb)-free
SiHFR9024-E3
IRFR9024
SnPb
SiHFR9024
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Linear Derating Factor
e
Linear Derating Factor (PCB Mount)
b
Single Pulse Avalanche Energy
a
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
c
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= - 25 V, starting T
= 25 °C, L = 4.5 mH, R
DD
J
≤ - 11 A, dI/dt ≤ 140 A/µs, V
≤ V
c. I
SD
DD
DS
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91278
S-82992-Rev. B, 12-Jan-09
IRFR9024, IRFU9024, SiHFR9024, SiHFU9024
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
- 60
• Repetitive Avalanche Rated
0.28
• Surface Mount (IRFR9024, SiHFR9024)
19
• Straight Lead (IRFU9024, SiHFU9024)
5.4
• Available in Tape and Reel
11
• P-Channel
Single
• Fast Switching
• Lead (Pb)-free Available
S
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
G
ruggedized
cost-effictiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU,SiHFU series) is for through-hole
D
mounting applications. Power dissipation levels up to 1.5 W
P-Channel MOSFET
are possible in typical surcace mount applications.
DPAK (TO-252)
DPAK (TO-252)
a
IRFR9024TRPbF
IRFR9024TRLPbF
a
SiHFR9024T-E3
SiHFR9024TL-E3
a
IRFR9024TR
IRFR9024TRL
a
SiHFR9024T
SiHFR9024TL
= 25 °C, unless otherwise noted
C
T
= 25 °C
C
V
at - 10 V
GS
T
= 100 °C
C
T
= 25 °C
C
e
T
= 25 °C
A
for 10 s
= 25 Ω, I
= - 8.8 A (see fig. 12).
G
AS
≤ 150 °C.
, T
J
Vishay Siliconix
device
design,
low
on-resistance
DPAK (TO-252)
IPAK (TO-251)
a
a
IRFR9024TRRPbF
IRFU9024PbF
a
a
SiHFR9024TR-E3
SiHFU9024-E3
a
-
IRFU9024
a
-
SiHFU9024
SYMBOL
LIMIT
V
- 60
DS
V
± 20
GS
- 8.8
I
D
- 5.6
I
- 35
DM
0.33
0.020
E
300
AS
I
- 8.8
AR
E
5.0
AR
42
P
D
2.5
dV/dt
- 4.5
T
, T
- 55 to + 150
J
stg
d
260
www.vishay.com
Available
RoHS*
COMPLIANT
and
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
1

IRFR9024TR Summary of contents

  • Page 1

    ... ° 100 ° ° °C A for Ω 8.8 A (see fig. 12 ≤ 150 ° Vishay Siliconix device design, low on-resistance DPAK (TO-252) IPAK (TO-251 IRFR9024TRRPbF IRFU9024PbF a a SiHFR9024TR-E3 SiHFU9024- IRFU9024 a - SiHFU9024 SYMBOL LIMIT ± 8 5 0.33 0.020 E 300 8 ...

  • Page 2

    ... IRFR9024, IRFU9024, SiHFR9024, SiHFU9024 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

  • Page 3

    ... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig. 2 -Typical Output Characteristics, T Document Number: 91278 S-82992-Rev. B, 12-Jan-09 IRFR9024, IRFU9024, SiHFR9024, SiHFU9024 = 25 °C C Fig Normalized On-Resistance vs. Temperature = 150 °C C Vishay Siliconix Fig Typical Transfer Characteristics www.vishay.com 3 ...

  • Page 4

    ... IRFR9024, IRFU9024, SiHFR9024, SiHFU9024 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91278 S-82992-Rev. B, 12-Jan-09 ...

  • Page 5

    ... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91278 S-82992-Rev. B, 12-Jan-09 IRFR9024, IRFU9024, SiHFR9024, SiHFU9024 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) r d(off) ...

  • Page 6

    ... IRFR9024, IRFU9024, SiHFR9024, SiHFU9024 Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. 50 kΩ ...

  • Page 7

    ... Inductor current * V Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91278. ...

  • Page 8

    ... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...