SI7880ADP-T1-E3 Vishay, SI7880ADP-T1-E3 Datasheet

MOSFET N-CH 30V 8SOIC POWERPAK

SI7880ADP-T1-E3

Manufacturer Part Number
SI7880ADP-T1-E3
Description
MOSFET N-CH 30V 8SOIC POWERPAK
Manufacturer
Vishay
Series
TrenchFET®r

Specifications of SI7880ADP-T1-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
40A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
125nC @ 10V
Input Capacitance (ciss) @ Vds
5600pF @ 15V
Power - Max
83W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.003 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
120 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
31 A
Power Dissipation
5400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
40A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
4mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
1V
Power Dissipation Pd
5.4W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7880ADP-T1-E3
Manufacturer:
VISHAY
Quantity:
150
Part Number:
SI7880ADP-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72651
S09-0272-Rev. D, 16-Feb-09
Ordering Information: Si7860ADP-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
V
DS
30
(V)
8
6.15 mm
D
7
0.0125 at V
N-Channel Reduced Q
0.0095 at V
D
Si7860ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)
6
D
R
PowerP AK SO-8
DS(on)
Bottom View
5
D
J
a
GS
GS
= 150 °C)
(Ω)
= 4.5 V
= 10 V
1
S
2
S
a
a
3
S
5.15 mm
4
a
G
b, c
I
A
D
16
16
= 25 °C, unless otherwise noted
(A)
Steady State
Steady State
L = 0.1 mH
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
g
, Fast Switching MOSFET
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• PWM Optimized for High Efficiency
• New Low Thermal Resistance PowerPAK
• 100 % R
• Buck Converter
• Synchronous Rectifier
Symbol
Symbol
T
R
R
J
Available
Package with Low 1.07 mm Profile
- High Side or Low Side
- Secondary Rectifier
V
V
E
I
I
P
, T
I
DM
thJA
thJC
I
AS
DS
GS
AS
D
S
D
stg
g
Tested
®
Power MOSFET
Typical
10 s
4.1
4.8
3.1
1.9
16
13
21
56
- 55 to 150
± 20
± 50
260
30
35
60
G
Steady State
N-Channel MOSFET
Maximum
1.5
1.8
1.1
2.5
11
26
70
Vishay Siliconix
8
D
Si7860ADP
S
www.vishay.com
®
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SI7880ADP-T1-E3 Summary of contents

Page 1

... Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO leadless package. The end of the lead terminal is exposed copper (not plated result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. ...

Page 2

... Si7860ADP Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time ...

Page 3

... Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72651 S09-0272-Rev. D, 16-Feb-09 2500 2000 1500 GS 1000 0.040 0.032 0.024 0.016 °C J 0.008 0.000 0.8 1.0 1.2 Si7860ADP Vishay Siliconix C iss C oss 500 C rss Drain-to-Source Voltage (V) DS Capacitance 2. 1. 1.50 1.25 1.00 0.75 0. ...

Page 4

... Si7860ADP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0 250 µA D 0.3 0.0 - 0.3 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 Limited DS(on 0 °C C Single Pulse ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72651. Document Number: 72651 S09-0272-Rev ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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