SI7880ADP-T1-E3 Vishay, SI7880ADP-T1-E3 Datasheet - Page 5

MOSFET N-CH 30V 8SOIC POWERPAK

SI7880ADP-T1-E3

Manufacturer Part Number
SI7880ADP-T1-E3
Description
MOSFET N-CH 30V 8SOIC POWERPAK
Manufacturer
Vishay
Series
TrenchFET®r

Specifications of SI7880ADP-T1-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
40A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
125nC @ 10V
Input Capacitance (ciss) @ Vds
5600pF @ 15V
Power - Max
83W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.003 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
120 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
31 A
Power Dissipation
5400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
40A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
4mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
1V
Power Dissipation Pd
5.4W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7880ADP-T1-E3
Manufacturer:
VISHAY
Quantity:
150
Part Number:
SI7880ADP-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72651.
Document Number: 72651
S09-0272-Rev. D, 16-Feb-09
0.01
0.1
2
1
10
- 4
Duty Cycle = 0.5
0.2
0.1
Single Pulse
0.02
0.05
Normalized Thermal Transient Impedance, Junction-to-Case
10
- 3
Square Wave Pulse Duration (s)
10
- 2
10
- 1
Vishay Siliconix
Si7860ADP
www.vishay.com
1
5

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