SUM60N10-17-E3 Vishay, SUM60N10-17-E3 Datasheet

MOSFET N-CH 100V 60A D2PAK

SUM60N10-17-E3

Manufacturer Part Number
SUM60N10-17-E3
Description
MOSFET N-CH 100V 60A D2PAK
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SUM60N10-17-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
16.5 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
100nC @ 10V
Input Capacitance (ciss) @ Vds
4300pF @ 25V
Power - Max
3.75W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.0165 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
25 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
60 A
Power Dissipation
3750 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
60A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
19mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SUM60N10-17-E3
SUM60N10-17-E3TR
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve for voltage derating.
d. When Mounted on 1" square PCB (FR-4 material).
Document Number: 72070
S-81224-Rev. B, 02-Jun-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case (Drain)
Ordering Information: SUM60N10-17-E3 (Lead (Pb)-free)
V
DS
100
(V)
0.0165 at V
0.019 at V
G
Top View
TO-263
R
N-Channel 100-V (D-S) 175 °C MOSFET
D
J
b
DS(on)
= 175 °C)
S
b
GS
GS
(Ω)
= 10 V
= 6 V
C
I
= 25 °C, unless otherwise noted
D
PCB Mount (TO-263)
60
56
(A)
T
T
T
L = 0.1 mH
T
C
A
C
C
= 125 °C
= 25 °C
= 25 °C
= 25 °C
d
FEATURES
APPLICATIONS
• TrenchFET
• 175 °C Junction Temperature
• New Low Thermal Resistance Package
• PWM Optimized for Fast Switching
• Isolated DC/DC converters
d
- Primary-Side Switch
G
Symbol
Symbol
T
R
J
R
V
V
E
I
I
P
, T
N-Channel MOSFET
DM
I
AS
thJC
GS
thJA
DS
AS
D
D
®
stg
Power MOSFETS
D
S
- 55 to 175
Limit
Limit
± 20
150
3.75
100
100
60
34
1.0
40
80
40
SUM60N10-17
a
a
c
Vishay Siliconix
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
RoHS
COMPLIANT
1

Related parts for SUM60N10-17-E3

SUM60N10-17-E3 Summary of contents

Page 1

... DS DS(on) 0.0165 100 0.019 TO-263 Top View Ordering Information: SUM60N10-17-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current b Single Pulse Avalanche Energy b Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... SUM60N10-17 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... C rss C oss Drain-to-Source Voltage (V) DS Capacitance Document Number: 72070 S-81224-Rev. B, 02-Jun- 0.025 0.020 25 °C 0.015 125 °C 0.010 0.005 0.000 100 SUM60N10-17 Vishay Siliconix 120 100 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics Drain Current (A) D On-Resistance vs. Drain Current 20 ...

Page 4

... SUM60N10-17 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 2.0 1.5 1.0 0.5 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature www.vishay.com 4 100 10 1 100 125 150 175 130 125 120 115 110 105 100 100 T - Junction Temperature (°C) J On-Resistance vs. Junction Temperature T = 150 °C ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72070. Document Number: 72070 S-81224-Rev. B, 02-Jun-08 125 150 175 - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUM60N10-17 Vishay Siliconix 1000 Limited DS(on) 100 °C C Single Pulse ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords