IRF9640 Vishay, IRF9640 Datasheet - Page 2

• Manufacturer Part Number: IRF9640
• Description: MOSFET P-CH 200V 11A TO-220AB
• Manufacturer: Vishay

Specifications of IRF9640

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9640

IRF9640, SiHF9640
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
R
t
t
R
I
I
C
R
V
DS(on)
C
C
V
GS(th)
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
Q
DS
g
L
L
t
I
SM
t
thCS
oss
t
t
on
thJA
thJC
DS
SD
iss
rss
S
rr
fs
gs
gd
D
r
f
S
rr
g
/T
J
MOSFET symbol
showing the
integral reverse
p - n junction diode
Between lead,
6 mm (0.25") from
package and center of
die contact
V
V
T
V
GS
GS
J
R
DS
T
= 25 °C, I
Intrinsic turn-on time is negligible (turn-on is dominated by L
G
Reference to 25 °C, I
= - 10 V
= - 10 V
J
= - 160 V, V
= 9.1 Ω, R
= 25 °C, I
V
V
V
V
V
DS
DD
TYP.
DS
f = 1.0 MHz, see fig. 5
0.50
TEST CONDITIONS
DS
GS
-
-
= - 50 V, I
= - 100 V, I
= - 200 V, V
= V
F
= 0 V, I
V
V
= - 11 A, dI/dt = 100 A/µs
V
GS
DS
S
GS
I
D
GS
D
= - 11 A, V
GS
= - 25 V,
= - 11 A, V
= 8.6 Ω, see fig. 10
, I
= ± 20 V
= 0 V,
see fig. 6 and 13
D
D
= 0 V, T
D
= - 250 µA
= - 250 µA
I
D
D
= - 6.6 A
GS
= - 6.6 A
= - 11 A
D
= 0 V
= - 1 mA
GS
DS
J
G
G
= 125 °C
= 0 V
= - 160 V,
b
b
MAX.
D
S
b
D
S
b
1.0
62
b
-
b
- 200
MIN.
- 2.0
4.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S-81272-Rev. A, 16-Jun-08
Document Number: 91086
TYP.
1200
-0.2
370
250
4.5
7.5
2.9
81
14
43
39
38
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
- 100
- 500
- 4.0
0.50
S
- 11
- 44
300
7.1
3.6
- 5
44
27
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
)
V/°C
nA
µA
nC
nH
µC
pF
ns
ns
V
V
Ω
S
A
V