IRL630 Vishay, IRL630 Datasheet - Page 5

MOSFET N-CH 200V 9A TO-220AB

IRL630

Manufacturer Part Number
IRL630
Description
MOSFET N-CH 200V 9A TO-220AB
Manufacturer
Vishay
Datasheet

Specifications of IRL630

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
400 mOhm @ 5.4A, 5V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
40nC @ 10V
Input Capacitance (ciss) @ Vds
1100pF @ 25V
Power - Max
74W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
9A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
400mohm
Rds(on) Test Voltage Vgs
5V
Threshold Voltage Vgs Typ
2V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRL630

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Document Number: 91303
S09-0058-Rev. A, 02-Feb-09
Vary t
required I
Fig. 9 - Maximum Drain Current vs. Case Temperature
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
AS
r
10 V
G
V
DS
t
p
I
AS
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
D.U.T
0.01 Ω
L
+
-
V
DD
A
Fig. 12b - Unclamped Inductive Waveforms
V
I
90 %
10 %
AS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
DS
V
DS
GS
r
G
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
10 V
V
GS
t
d(on)
V
DS
t
r
t
IRL630, SiHL630
p
D.U.T.
r
D
Vishay Siliconix
t
d(off)
V
DS
t
f
V
+
-
www.vishay.com
V
DD
DD
5

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