IRFPC50LC Vishay, IRFPC50LC Datasheet

MOSFET N-CH 600V 11A TO-247AC

IRFPC50LC

Manufacturer Part Number
IRFPC50LC
Description
MOSFET N-CH 600V 11A TO-247AC
Manufacturer
Vishay
Datasheet

Specifications of IRFPC50LC

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 6.6A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
84nC @ 10V
Input Capacitance (ciss) @ Vds
2300pF @ 25V
Power - Max
190W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Transistor Polarity
N Channel
Continuous Drain Current Id
11A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
600mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFPC50LC

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFPC50LC
Manufacturer:
IR
Quantity:
46
Part Number:
IRFPC50LC
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRFPC50LCPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91242
S11-0443-Rev. B, 14-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
DD
TO-247AC
(Max.) (nC)
(nC)
(V)
(nC)
≤ 11 A, dI/dt ≤ 100 A/μs, V
= 25 V, starting T
(Ω)
D
a
J
= 25 °C, L = 13 mH, R
c
a
a
b
DD
V
GS
≤ V
= 10 V
DS
G
, T
N-Channel MOSFET
J
Single
≤ 150 °C.
600
84
18
36
This datasheet is subject to change without notice.
g
= 25 Ω, I
C
D
S
= 25 °C, unless otherwise noted)
Power MOSFET
0.60
V
GS
AS
6-32 or M3 screw
at 10 V
= 11 A (see fig. 12).
T
for 10 s
C
= 25 °C
T
T
C
C
TO-247AC
IRFPC50LCPbF
SiHFPC50LC-E3
IRFPC50LC
SiHFPC50LC
= 100 °C
= 25 °C
FEATURES
• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30 V V
• Reduced C
• Isolated Central Mounting Hole
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
This new series of low charge Power MOSFETs achieve
significantly lower gate charge over conventional MOSFETs.
Utilizing advanced Power MOSFET technology the device
improvements allow for reduced gate drive requirements,
faster switching speeds and increased total system savings.
These device improvements combined with the proven
ruggedness and reliability of Power MOSFETs offer the
designer a new standard in power transistors for switching
applications.
The
commercial-industrial applications where higher power levels
preclude the use of TO-220AB devices. The TO-247AC is
similar but superior to the earlier TO-218 package because its
isolated mounting hole.
TO-247AC
SYMBOL
IRFPC50LC, SiHFPC50LC
T
dV/dt
J
V
iss
V
E
E
I
I
P
, T
DM
I
AR
DS
GS
AR
D
AS
D
, C
stg
oss
GS
, C
Rating
package
rss
- 55 to + 150
LIMIT
300
± 30
600
920
190
7.3
1.5
3.0
1.1
11
44
11
19
10
www.vishay.com/doc?91000
d
Vishay Siliconix
is
preferred
www.vishay.com
lbf · in
UNIT
W/°C
N · m
RoHS*
COMPLIANT
V/ns
mJ
mJ
°C
W
V
A
A
Available
for
1

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IRFPC50LC Summary of contents

Page 1

... Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91242 S11-0443-Rev. B, 14-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT IRFPC50LC, SiHFPC50LC Power MOSFET FEATURES • Ultra Low Gate Charge 600 • ...

Page 2

... IRFPC50LC, SiHFPC50LC Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91242 S11-0443-Rev. B, 14-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT IRFPC50LC, SiHFPC50LC = 25 °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C This datasheet is subject to change without notice ...

Page 4

... IRFPC50LC, SiHFPC50LC Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area This datasheet is subject to change without notice. ...

Page 5

... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91242 S11-0443-Rev. B, 14-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT IRFPC50LC, SiHFPC50LC R Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms This datasheet is subject to change without notice ...

Page 6

... IRFPC50LC, SiHFPC50LC Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

Page 7

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91242. Document Number: 91242 S11-0443-Rev. B, 14-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT IRFPC50LC, SiHFPC50LC Peak Diode Recovery dV/dt Test Circuit + Circuit layout con ideration • Low tray inductance • ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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