IRFPC60LC Vishay, IRFPC60LC Datasheet - Page 5

MOSFET N-CH 600V 16A TO-247AC

IRFPC60LC

Manufacturer Part Number
IRFPC60LC
Description
MOSFET N-CH 600V 16A TO-247AC
Manufacturer
Vishay
Datasheet

Specifications of IRFPC60LC

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 9.6A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
120nC @ 10V
Input Capacitance (ciss) @ Vds
3500pF @ 25V
Power - Max
280W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.4 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
16 A
Power Dissipation
280 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFPC60LC

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Document Number: 91244
S09-0064-Rev. A, 02-Feb-09
Fig. 9 - Maximum Drain Current vs. Case Temperature
Vary t
required I
Fig. 12a - Unclamped Inductive Test Circuit
p
to obtain
AS
R
10 V
G
V
DS
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
t
p
I
AS
D.U.T
0.01 Ω
L
+
-
V
DD
Fig. 12b - Unclamped Inductive Waveforms
IRFPC60LC, SiHFPC60LC
90 %
10 %
V
Fig. 10a - Switching Time Test Circuit
V
Fig. 10b - Switching Time Waveforms
I
V
AS
DS
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
t
GS
d(on)
V
DS
t
r
t
p
D.U.T.
R
Vishay Siliconix
D
t
d(off)
V
DS
t
f
+
-
V
www.vishay.com
V
DD
DD
5

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