IRFPS40N50LPBF Vishay, IRFPS40N50LPBF Datasheet

MOSFET N-CH 500V 46A SUPER247

IRFPS40N50LPBF

Manufacturer Part Number
IRFPS40N50LPBF
Description
MOSFET N-CH 500V 46A SUPER247
Manufacturer
Vishay
Type
Power MOSFETr

Specifications of IRFPS40N50LPBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 28A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
46A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
380nC @ 10V
Input Capacitance (ciss) @ Vds
8110pF @ 25V
Power - Max
540W
Mounting Type
Through Hole
Package / Case
Super-247
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.1 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
46 A
Power Dissipation
540000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
46A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
100mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
5V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.1Ohm
Drain-source On-volt
500V
Gate-source Voltage (max)
±30V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
Super-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFPS40N50LPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFPS40N50LPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
IRFPS40N50LPBF
Quantity:
540
Document Number: 91260
Applications
Features and Benefits
Absolute Maximum Ratings
I
I
I
P
V
dv/dt
T
T
Diode Characteristics
I
I
V
t
Q
I
t
D
D
DM
S
SM
rr
RRM
on
J
STG
D
GS
SD
rr
@ T
@ T
@T
Symbol
C
C
C
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, V
= 25°C Power Dissipation
.
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
Parameter
Ã
Parameter
SMPS MOSFET
d
GS
GS
@ 10V
@ 10V
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
170
220
705
1.3
9.0
IRFPS40N50LPbF
300 (1.6mm from case )
1060
V
500V
180
250
330
–––
1.5
2.0
46
-55 to + 150
DSS
Max.
180
540
4.3
±30
nC T
46
29
34
ns T
A
V
A
HEXFET
R
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
T
DS(on)
J
J
J
J
J
J
0.087Ω
= 125°C, di/dt = 100A/µs
= 125°C, di/dt = 100A/µs
= 25°C, I
= 25°C, I
= 25°C, I
= 25°C
Conditions
typ.
®
S
F
S
= 46A, V
= 46A
= 46A, V
Power MOSFET
Trr
170ns 46A
Super-247™
GS
GS
www.vishay.com
typ.
= 0V
= 0V
PD- 95141
f
f
Units
W/°C
V/ns
°C
W
A
V
f
f
09/14/04
I
D
1

Related parts for IRFPS40N50LPBF

IRFPS40N50LPBF Summary of contents

Page 1

... Pulsed Source Current SM Ã (Body Diode) V Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr I Reverse Recovery Current RRM t Forward Turn-On Time on Document Number: 91260 IRFPS40N50LPbF SMPS MOSFET HEXFET V R DSS 500V Max. @ 10V 10V 29 GS 180 540 4.3 ± - 150 300 (1 ...

Page 2

... IRFPS40N50LPbF Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage R Internal Gate Resistance ...

Page 3

... Fig 1. Typical Output Characteristics 1000 100 ° 150 ° 20µs PULSE WIDTH 0 Gate-to-Source Voltage (V) GS Fig 3. Typical Transfer Characteristics Document Number: 91260 IRFPS40N50LPbF 1000 TOP 100 BOTTOM 10 4.5V 1 ° 0.1 0.1 10 100 Fig 2. Typical Output Characteristics 3 2.5 2.0 1.5 1.0 0.5 = 50V 0.0 -60 -40 -20 ...

Page 4

... IRFPS40N50LPbF 1000000 0V MHZ C iss = SHORTED C rss = C gd 100000 C oss = 10000 Ciss 1000 Coss 100 Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 47A 100 200 Q , Total Gate Charge (nC) G Fig 7. Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91260 100 1000 0 1000 ...

Page 5

... SINGLE PULSE (THERMAL RESPONSE) 0.001 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91260 IRFPS40N50LPbF Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1 ...

Page 6

... IRFPS40N50LPbF 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 ° ° 150 C J Single Pulse 1 10 100 V , Drain-to-Source Voltage (V) DS Fig 12. Maximum Safe Operating Area D.U 20V 0.01 Ω Fig 14a. Unclamped Inductive Test Circuit Current Regulator Same Type as D.U.T. 50KΩ ...

Page 7

... Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * Fig 16. For N-Channel HEXFET Document Number: 91260 IRFPS40N50LPbF + • • ƒ • - „ • • • • P.W. Period D = Period Body Diode Forward Current ...

Page 8

... IRFPS40N50LPbF Case Outline and Dimensions — Super-247 Super-247 (TO-274AA) Part Marking Information EXAMPLE: THIS IS AN IRFPS37N50A WITH ASSEMBLY LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE Note: "P" in assembly line position indicates "Lead-Free" ...

Page 9

... Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. ...

Related keywords